2224-6L Allicdata Electronics
Allicdata Part #:

2224-6L-ND

Manufacturer Part#:

2224-6L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS RF BIPO 22W 1.25A 55LV1
More Detail: RF Transistor NPN 40V 1.25A 2.2GHz ~ 2.4GHz 22W Ch...
DataSheet: 2224-6L datasheet2224-6L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 2.2GHz ~ 2.4GHz
Noise Figure (dB Typ @ f): --
Gain: 7dB
Power - Max: 22W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 1.25A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55LV
Supplier Device Package: 55LV
Description

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The 2224-6L is a NPN silicon single stage broadband RF amplifier designed for high gain, low noise and wideband applications. It is a RF bipolar junction transistor (BJT) which features an integrated circuit layout to enhance overall performance and 25V bipolar technology to ensure excellent gain and response. The available frequencies range from 100Hz to 13GHz, and the current amplifiers have a wide dynamic range with good gain flatness and can be used for high frequency applications such as radio communication systems.

The 2224-6L has excellent gains, linearity, stability and noise figures. The gain is typically about 25dB with a 3dB bandwidth between 10MHz to 6GHz. The noise figure is typically less than 0.3dB, and the linearity is typically better than 1dB. The device has a maximum operating frequency of 13GHz and a typical power output of 200mW.

The 2224-6L is a very versatile RF device and can be used in several applications, including radio frequency amplifiers, oscillators, receiver and transmitter front ends, and even in systems with a wide dynamic range. It can also be used as a general-purpose amplifier, in low noise applications and can be used as a mixer in broadband applications. In addition, the device is suitable for mixing, filtering and switching.

The 2224-6L is a high power, high gain, low noise RF device. The device features an integrated circuit layout with excellent temperature stability, low noise and good linearity. In addition, this device features a high power capability and wide dynamic range. The main features are the low bias voltage required to operate the device and the low noise performance.

The 2224-6L is designed for use in applications requiring a high gain, low noise and wideband amplifier. The current device is suitable for use in a variety of RF applications such as cellular communication systems, satellite communication systems, and broadband applications. In addition, the device can be used in microwave systems and as a mixer in high frequency applications. The device is constructed using high quality components and is suitable for use in high reliability applications.

The 2224-6L is based on the principle of bipolar junction transistor technology, which involves the use of two transistors connected together in a single stage amplifier. The two transistors are connected to two separate current sources and respond differently depending upon the input and output signals. This configuration is suitable for high power applications where low noise is required. The transistors are arranged in a cascode configuration which provides good isolation between input and output signals.

The 2224-6L is designed to operate in both wideband and narrowband applications. The device is able to provide good gain and linearity with low noise, and is suitable for applications such as radio communication systems, satellite communication systems and broadband applications. The device can also be used as a mixer in high frequency applications. The 2224-6L is constructed using high quality components and is suitable for use in high reliability applications.

The specific data is subject to PDF, and the above content is for reference

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