| Allicdata Part #: | 2225-4L-ND |
| Manufacturer Part#: |
2225-4L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS RF BIPO 10W 600MA 55LV1 |
| More Detail: | RF Transistor NPN 40V 600mA 2.2GHz ~ 2.5GHz 10W Ch... |
| DataSheet: | 2225-4L Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 40V |
| Frequency - Transition: | 2.2GHz ~ 2.5GHz |
| Noise Figure (dB Typ @ f): | -- |
| Gain: | 8.5dB |
| Power - Max: | 10W |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 200mA, 5V |
| Current - Collector (Ic) (Max): | 600mA |
| Operating Temperature: | 200°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | 55LV |
| Supplier Device Package: | 55LV |
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The 2225-4L transistors belong to the bipolar junction transistor (BJT) class and its application field lies in radio frequency (RF). This transistor is often used in high power microwave applications because of its capability to provide gain and minimal losses. It is a type of NPN transistor with a maximum current rating of 35 amperes and a voltage rating of 15 volts. In order to understand the working of the 2225-4L transistors, it is important to have a clear idea about the fundamental structure of these transistors.
A BJT consists of three terminals connected between three layers of semiconductor material. The three layers consists of an epitaxial layer, which is connected to the base terminal and often performs the function of doping by means of induced acceptor impurities, a collector layer and an emitter layer, each connected to the collector terminal and the emitter terminal, respectively. The base terminal is thinner than the collector and the emitter layers and separates them from each other.
When a small voltage is applied at the base terminal of a 2225-4L transistor, it produces negligible current flow. However, when a small current flows through the base junction, it results in a proportionally greater current flow between the collector and emitter. This is known as the amplified current. As a result, the 2225-4L transistors are used as switches and amplifiers.
In order to increase the gain of a particular device, current must be drawn from the emitter pin and introduced to the collector pin. The amount of current entering the base pin will increase exponentially with increasing collector current. This is known as the beta amount, which is the gain coefficient of a BJT and can be calculated by dividing the collector current by the base current.
The 2225-4L transistor also includes a unique feature known as the commutatator. This is a three-terminal device that helps to effectively commutate, or switch, the current. This feature makes the 2225-4L transistors useful for high-power microwave applications. The commutator is used to transfer the current from the source to the load by switching it off and on in a controlled manner.
The 2225-4L transistors work by allowing a circuit to be driven at high frequency, while also allowing the circuit to remain stable due to the commutatator feature. When the transistor is turned on, the small current that enters the base will be amplified and transferred to the collector. The collector will then provide the power to the load or circuit.
The 2225-4L transistors are invaluable components in RF and microwave applications. They provide the capability to amplify signals while maintaining relatively low losses and minimal power consumption. The inclusion of the commutator makes the 2225-4L transistors an ideal solution for high power microwave applications.
The specific data is subject to PDF, and the above content is for reference
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2225-4L Datasheet/PDF