Allicdata Part #: | 23A025-ND |
Manufacturer Part#: |
23A025 |
Price: | $ 97.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 9W 1.2A 55BT2 |
More Detail: | RF Transistor NPN 22V 1.2A 3.7GHz 9W Chassis Mount... |
DataSheet: | 23A025 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 88.34630 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 22V |
Frequency - Transition: | 3.7GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 6dB ~ 6.3dB |
Power - Max: | 9W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 420mA, 5V |
Current - Collector (Ic) (Max): | 1.2A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 55BT |
Supplier Device Package: | 55BT |
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RF transistors are one of the most widely used semiconductor components for various applications in communications, amplifiers and other applications in the field of electronics. The 23A025 is a high-performance NPN Bi-FET transistor that is ideal for those applications that require high gain, low noise and excellent linearity. Its wide range of operating frequency and power capabilities make it a great option for RF amplifier designs.
The 23A025 is a packaged NPN Bi-FET transistor that uses a proprietary design to optimize its performance. It is designed to be used in the most demanding high frequency applications with excellent linearity and low distortion over a wide range of operating frequencies. With a low noise figure and high gain, the 23A025 is an excellent choice for RF amplifier designs.
The 23A025 transistor is ideal for use in RF amplifiers requiring high gain, low noise and excellent linearity. Due to its wide operating frequency range and power capabilities, it is suitable for a number of different applications. It is especially suited for applications in the industrial, scientific, military and aerospace industries, where its excellent RF performance is needed for the most demanding applications.
The operation of the 23A025 is based on the movement of electrons in a semi-conductor. The transistor consists of three layers of semiconductor material that can be viewed as two transistors that are connected together. The first layer is known as the emitter, which injects electrons into the second layer, the base, where they are controlled and amplified. The amplified electrons then pass through to the third layer, the collector, which is then responsible for taking the amplified current to another device.
The 23A025 is available in a high-performance 9-Pin TO-39 package, making it ideal for applications that require high gain, low noise and excellent linearity in a compact size. It also has excellent gain over temperature characteristics, making it suitable for use in demanding temperature environments. As a result, it is a popular choice for use in various industries in the field of advanced electronics.
The 23A025 is a reliable and high-performance transistor for use in various RF amplifier designs. Its wide operating frequency range and power capabilities make it an excellent choice for the most demanding applications. Its low noise figure and excellent linearity make it the perfect choice for industrial and military applications, where its excellent RF performance is necessary for optimal operation.
The specific data is subject to PDF, and the above content is for reference
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