24AA01H-I/WF16K Allicdata Electronics
Allicdata Part #:

24AA01H-I/WF16K-ND

Manufacturer Part#:

24AA01H-I/WF16K

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 1K I2C 400KHZ WAFER
More Detail: EEPROM Memory IC 1Kb (128 x 8) I²C 400kHz 900ns Di...
DataSheet: 24AA01H-I/WF16K datasheet24AA01H-I/WF16K Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Memory Interface: I²C
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

24AA01H-I/WF16K is a highly robust, 16-Kb serial EEPROM family, designed specifically for industrial and automotive applications. These products are suitable for a wide temperature range and extreme environmental conditions. The products are available in a range of industry-standard package options to meet the most demanding design requirements.

24AA01H-I/WF16K memory application fields generally refer to data storage in industrial equipment control and automation, medical imaging and equipment, automotive, telecom and office automation. 24AA01H-I/WF16K are commonly used to store configuration information, system calibration, calibration constants, time and date. In addition, they can store communication sequences, alarm and event codes, patient information and other data relevant to the system and applications.

24AA01H-I/WF16K working principle is based on the number of non-volatile memory cells (NVM cells) in the device. NVM cells are capable of storing a digital signal that is not affected by power loss or power outages. This signal can be used to store information for a long period of time. The signal is stored in the NVM cells in the form of an electrical charge, and can be accessed by a series of write and read operations that involve the usage of an external programming device.

A write operation to 24AA01H-I/WF16K begins with the transfer of data from the external programming device to the memory. The external programming device then sends a signal to the memory via its “write enable” pins. The write enable signal activates the NVM cells and allows the external programming device to write data into the cells. The data written in the cells is stored until the external programming device sends a signal to the memory via its “disable” pin, which will erase the stored data.

A read operation from 24AA01H-I/WF16K starts with an appropriate signal from the external programming device. This signal activates the NVM cells, transferring the stored data from the memory to the external programming device. The external programming device then processes the data and stores it in its own memory. The data remains accessible until the external programming device deactivates the NVM cells by sending a disable signal.

24AA01H-I/WF16K is an ideal choice for applications that need to store data consistently and reliably. It can operate within a wide range of temperatures and still provide reliable performance due to its robust and reliable design. 24AA01H-I/WF16K also provides compatibility with a variety of external programming devices, allowing designers to use the device to meet their specific application requirements.

The specific data is subject to PDF, and the above content is for reference

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