24AA025E48-I/SN

Write Cycle Time - Word, Page:	5ms
Base Part Number:	24AA025E48
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 85°C (TA)
Voltage - Supply:	1.7 V ~ 5.5 V
Memory Interface:	I²C
Access Time:	900ns
Series:	--
Clock Frequency:	400kHz
Memory Size:	2Kb (256 x 8)
Technology:	EEPROM
Memory Format:	EEPROM
Memory Type:	Non-Volatile
Part Status:	Active
Packaging:	Tube

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Application Field

The 24AA025E48-I/SN is a non-volatile EEPROM memory device, which is produced by Microchip, Inc. It is widely used in many industry-applicable devices, such as industrial control systems, network communication systems, and automotive electronics.This device is designed to provide a dependable EEPROM storage solution for mission-critical data and store data across a wide operating temperature range. The associated integrated circuits provide high-endurance EEPROM operation with an endurance cycle of up to one million. The 24AA025E48-I/SN also provides enhancements for memory cell density allowing for a larger memory capacity if necessary.The device contains an array of integrated circuits, each with their own specific functions. The associated N-channel MOSFETs are used to provide power to the device and to ensure that voltage and current levels remain within safe limits. The Flash memory controllers and the associated logic enable the EEPROM control signals to be generated and sent to the appropriate memory array address. Finally, the Error Detection and Correction (EDAC) processor provides a number of options to ensure data integrity.

Working Principle

The 24AA025E48-I/SN is a non-volatile memory device, meaning that data stored on the device is not lost with loss of power or with environmental changes. This is enabled through the use of a high-endurance EEPROM cell, which has been designed to be able to withstand over a million write cycles.The data is written and read from the device in 8-bit words, up to 32 Kbit of total data storage. The device is organized as 16 blocks of 256 words each. To write data to the EEPROM, the appropriate chip enable and write enable signals are issued from the associated logic. The data is then transferred from the internal data bus to the appropriate address of the EEPROM array. To read the data back from the EEPROM, the appropriate chip enable, the address pointing to the data location, and the read enable signal have to be issued. The data, which is 8 bits wide, is then transferred to the internal data bus and can then be used by the associated logic as required.The EDAC processor checks the integrity of the data stored in the EEPROM after every write and read cycle. This ensures that any data which may have been corrupted due to a voltage drop or power failure is automatically identified, so that the data can then be re-written or corrected, as required.

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