24AA1026T-I/SN

Write Cycle Time - Word, Page:	5ms
Base Part Number:	24AA1026
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 85°C (TA)
Voltage - Supply:	1.7 V ~ 5.5 V
Memory Interface:	I²C
Access Time:	900ns
Series:	--
Clock Frequency:	400kHz
Memory Size:	1Mb (128K x 8)
Technology:	EEPROM
Memory Format:	EEPROM
Memory Type:	Non-Volatile
Part Status:	Active
Packaging:	Tape & Reel (TR)

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24AA1026T-I/SN Memory

The 24AA1026T-I/SN is a device in the Memory category which provides both high storage capacity and ease of access for users. This device is suitable for use in embedded systems, and it is useful for storing large amounts of information.

Application Field

The 24AA1026T-I/SN has a wide range of applications. It is particularly suitable for use in battery-powered embedded systems, as it provides both low power consumption and fast access time. Additionally, this device is suitable for data protection applications, as it has highly reliable data retention features. This device is also useful for factory automation applications and for data logging applications.

Features

This device is a distinctively high-capacity memory device, providing a maximum storage capacity of 256 Kbits. It is also equipped with an I2C interface and an I2C speed of 400 kHz, making it easy and fast to access data. Additionally, the 24AA1026T-I/SN has a wide operating voltage range, from 2.2V to 5.5V, making it highly suitable for embedded systems. It is also equipped with a write protect pin, allowing users to efficiently protect their data from accidental or intentional changes. Furthermore, the 24AA1026T-I/SN has a very low current consumption rate as well as reliable power on/off cycling protection, making it highly suitable for embedded applications.

Working Principle

The 24AA1026T-I/SN is based on EEPROM technology. It uses an internally regulated charge pump circuit to write and erase data, while the I2C interface is used for communication and data exchange. The device is functionally divided into two areas: one is the EEPROM memory array (256 Kbits), and the other is the I2C interface peripheral. A write cycle consists of the following steps: 1) I2C bus data and address are received in the peripheral, 2) the EEPROM\'s erase & write controller initiates erase or write cycle, 3) the charge pump controller supplies the necessary voltage to the EEPROM\'s decoder and array, 4) after a write cycle is completed, an acknowledge bit is returned.The read cycle consists of the following steps: 1) I2C bus data and address received in the I2C interface peripheral, 2) the page array address and control bits are loaded onto the decoder, 3) the data from the page array is serially shifted out of the serial-in data register, 4) the data is sent to the I2C interface via the acknowledge pin.The 24AA1026T-I/SN device also includes a self-timed write protect (WP) cycle, as well as a number of system-level features such as temperature profiles, partial array programming, and security search. These features help to ensure reliable data storage and retrieval.

Conclusion

The 24AA1026T-I/SN is a high-capacity memory device, suitable for use in embedded systems. It provides large storage capacity and quick access time, as well as a number of features such as low power consumption, reliable data retention and write protection. This device is based on EEPROM technology and operates according to a specific set of commands for reading and writing data.

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