Allicdata Part #: | 24AA128-I/S16K-ND |
Manufacturer Part#: |
24AA128-I/S16K |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC EEPROM 128K I2C 400KHZ WAFER |
More Detail: | EEPROM Memory IC 128Kb (16K x 8) I²C 400kHz 900ns ... |
DataSheet: | 24AA128-I/S16K Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 128Kb (16K x 8) |
Clock Frequency: | 400kHz |
Write Cycle Time - Word, Page: | 5ms |
Access Time: | 900ns |
Memory Interface: | I²C |
Voltage - Supply: | 1.7 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
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Introduction
The 24AA128-I / S16K memory device series offers a low cost and reliable solution for embedded system applications requiring transceiver control, data packet buffering, and nonvolatile data storage. This unique series memory devices offers a superior combination of non-volatile and up to 16 Kbits of EEPROM memory, all in one package.
Application Field
The 24AA128-I/S16K memory device is designed for applications which require EEPROM and non-volatile memory storage, such as:
- Data acquisition
- Telecommunications
- Consumer electronics
- Industrial automation
- Robotics
- Medical instruments
- Avionics
The 24AA128-I/S16K memory device series is designed for fast-read and write operation, making it well suited for embedded systems requiring quick response time. The 24AA128-I/S16K memory device is also highly reliable and durable, allowing for long-term storage of critical data. The 24AA128-I/S16K memory device series also offers power-managed devices that support advanced sleep modes requiring little power.
Working Principle
The 24AA128-I/S16K memory device utilizes an organized array of memory cells to store data. Each bit of data is stored in an individual cell. Each cell contains two transistors and two capacitors, which together form a ‘cell’ that contains a single bit of data. The two transistors are used to select and control the state of the memory cell.
The memory cell is connected to source lines and drain lines. The voltage applied to the source lines determines whether the data stored in the memory cell is a 0 or a 1. This is done by controlling the amount of current flowing through the two transistors. When a 0 is stored in a memory cell, a voltage is applied to the drain line to make the memory cell a 0, and when a 1 is stored in a memory cell, a voltage is applied to the source line to make the memory cell a 1.
The memory cells are connected to control logic, which is used to read and write data to the memory. When a read or write operation is requested, the control logic sends a signal to select the desired memory cell. The control logic then reads or writes a data bit based on the value of the voltage applied to the source or drain lines. The 24AA128-I/S16K memory device can also be programmed to store multiple bits of data in a single memory cell.
The 24AA128-I/S16K memory device can be programmed to retain data even after power is removed. This is known as non-volatile memory. This allows for data to be retained in the memory even when the device is not in use. This feature is often used in embedded systems to store data for long periods of time, allowing for quick access to the stored data when needed.
Conclusion
The 24AA128-I/S16K memory device series is a low cost and reliable solution for embedded system applications. This series allows for data packet buffering, EEPROM, and non-volatile data storage, making it ideal for applications such as data acquisition, consumer electronics, medical instruments, and more. The 24AA128-I/S16K memory device series uses an organized array of memory cells to store data, and it is programmed to retain data even after power is removed, making it a reliable and efficient memory device.
The specific data is subject to PDF, and the above content is for reference
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