25C160T/SN Allicdata Electronics
Allicdata Part #:

25C160T/SN-ND

Manufacturer Part#:

25C160T/SN

Price: $ 0.51
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 16K SPI 3MHZ 8SOIC
More Detail: EEPROM Memory IC 16Kb (2K x 8) SPI 3MHz 8-SOIC
DataSheet: 25C160T/SN datasheet25C160T/SN Datasheet/PDF
Quantity: 1000
3300 +: $ 0.46721
Stock 1000Can Ship Immediately
$ 0.51
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: 25C160
Description

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25C160T/SN is a popular memory that has many applications in the consumer electronics market and the industrial technology market. It is an electrically erasable programmable read-only memory (EEPROM). This type of memory has the same features as a standard EEPROM, just in a density (bits/byte) that is suitable for consumer electronics. This type of memory is used in electronics such as memory cards, digital cameras, and other consumer electronics.

The working principle of 25C160T/SN memory is based on the concept of storage and retrieval. The memory consists of an array of cells or elements, each of which can store a single bit. These cells are arranged in a linear array and can be accessed sequentially from a single address. The same address can be used to both write data to the memory and to read data from the memory. Data can be written to the memory using a write cycle, by which the data is written to the array of elements. Data can also be erased from the memory, either by using a special erase cycle or using a programming voltage.

All memory cells of the 25C160T/SN memory contain a programmable State, which can be either programmed or erased. Programming the memory cell means changing the state of the cell from erased to programmed. This programming can be done by sending a voltage higher than the cell’s threshold voltage. Erasure of the memory cell means changing the state of the cell from programmed to erased. This is done by sending a voltage below the cell’s threshold voltage.

The 25C160T/SN memory is used in many applications, such as secure digital (SD) cards, smart cards and SIM cards, where its secure storage and retrieval capabilities are valuable. It is also used in embedded systems, where its ability to store information in non-volatile memory is useful. In addition, the memory is used in a wide range of consumer electronics, including digital cameras, MP3 players and digital music players.

The 25C160T/SN memory is an important component in many consumer and industrial applications. It offers secure storage, fast retrieval and a high density, making it an ideal choice for applications requiring secure storage and fast retrieval. It has a wide variety of applications, such as in secure digital (SD) cards, smart cards and embedded systems, and it is widely used in the consumer electronics market.

The specific data is subject to PDF, and the above content is for reference

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