2N918 Discrete Semiconductor Products |
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Allicdata Part #: | 2N918-ND |
Manufacturer Part#: |
2N918 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS RF NPN 15V 50MA TO-72 |
More Detail: | RF Transistor NPN 15V 50mA 600MHz 200mW Through Ho... |
DataSheet: | 2N918 Datasheet/PDF |
Quantity: | 88 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 600MHz |
Noise Figure (dB Typ @ f): | 6dB @ 60kHz |
Gain: | -- |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 3mA, 1V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AF, TO-72-4 Metal Can |
Supplier Device Package: | TO-72 |
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The 2N918 is a bipolar junction transistor (BJT) specifically designed for use in Radio Frequency (RF) applications. It is a NPN high voltage transistor capable of delivering excellent stability, low noise, low parasitic capacitance and good linearity, making it ideal for driving power amplifiers and oscillators.
The 2N918\'s base terminal can handle a maximum voltage of 45V, and it also has excellent current gain with a typical gain of 120. To facilitate its use in high-frequency applications, the transit frequency of the 2N918 is 40 MHz at the collector current of 10 mA and gain of 50, which is an excellent performance for the application field.
The 2N918\'s working principle is simple. When a current flows through the base terminal, it will experience a voltage drop, which in turn causes a flow of current through the emitter junction. The resulting electron flow across the collector terminal causes current to be collected in proportion to the amount of current flowing into the base terminal. This current flow is regulated by the gain of the transistor, which is controlled by the ratio of the collector current to the base current.
The 2N918 is a versatile and useful transistor for use in RF applications, thanks to its robust construction and excellent high-frequency response. Its low capacitance and tolerance for high voltages makes it ideal for high-frequency oscillator and power amplifier designs. Its fairly low noise performance makes it suitable for use in low-noise applications as well.
Overall, the 2N918 bipolar junction transistor is uniquely suited for use in RF designs and applications, with its excellent gain and high-frequency performance allowing for robust, reliable and exceptional performance. Making good use of its low capacitance, stable gain, and steady voltage drop, the 2N918 is a great choice for radio-frequency designs.
The specific data is subject to PDF, and the above content is for reference
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