30KPA60CE3/TR13 Circuit Protection

Current - Peak Pulse (10/1000µs):	--
Base Part Number:	30KPA60
Supplier Device Package:	P600
Package / Case:	P600, Axial
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Capacitance @ Frequency:	--
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	30000W (30kW)
Series:	--
Voltage - Clamping (Max) @ Ipp:	--
Voltage - Breakdown (Min):	63.18V
Voltage - Reverse Standoff (Typ):	60V
Bidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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TVS – Diodes are semiconductor devices with an external circuit, and a junction inserted in its breakdown voltage, which are used to protect various electronic systems and components from electrical overstress (EOS). The 30KPA60CE3/TR13 is a unique type of TVS – Diodes which is used primarily as an EOS protection for electronic circuits and components.The 30KPA60CE3/TR13 TVS diode has a peak power rating of 600W at 1ms, with a max standoff voltage of 60V and a breakdown voltage of 30V, as well as power dissipation of 0.125W. Its fast acting response time is as low as 15ns, making it ideal for a huge range of applications.The 30KPA60CE3/TR13 is often incorporated into audio equipment, cell phone linecards, PADs, digital cameras, fiber-optic, and other electronic circuits and devices which are vulnerable to electrostatic discharge (ESD), inductive load switching and high voltage transients. This TVS diode is suitable for such applications due to its low clamping voltage, faster response time, low leakage current, and high peak power rating.The principle of a 30KPA60CE3/TR13 TVS diode is based on the principle of a silicon diode. The TVS diode is formed from n-type and p-type layers of silicon materials, which have been stacked together in a way that allows them to form a forward and reverse voltage junction. This junction is known as the junction breakdown voltage, and is usually specified as the peak standoff voltage. During an EOS event, the junction breaks down, allowing the device to conduct current and absorb electrical energy, thus protecting the circuit from damage.The 30KPA60CE3/TR13 is an excellent choice for providing overstress protection in a variety of electronic circuits and devices. Its low breakdown voltage ensures a fast acting response time, while its high peak power rating ensures that a large amount of energy can be absorbed and dissipated during an EOS event. Furthermore, its low leakage current ensures that the device does not cause any further damage to the circuit when it is not detecting electrical overstress. As such, this type of TVS diode is usually preferred for a wide range of applications.

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