34AA02T-E/MS

Write Cycle Time - Word, Page:	5ms
Base Part Number:	34AA02
Supplier Device Package:	8-MSOP
Package / Case:	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 125°C (TA)
Voltage - Supply:	1.7 V ~ 5.5 V
Memory Interface:	I²C
Access Time:	900ns
Series:	--
Clock Frequency:	400kHz
Memory Size:	2Kb (256 x 8)
Technology:	EEPROM
Memory Format:	EEPROM
Memory Type:	Non-Volatile
Part Status:	Active
Packaging:	Tape & Reel (TR)

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MemoryThe 34AA02T-E/MS is a low-power and energy-efficient integrated circuit memory module that is used in a variety of applications. Its unique combination of features makes it an optimum choice for many different types of applications including embedded systems, consumer electronics and medical device applications. The 34AA02T-E/MS is an 8-bit or 16-bit CMOS integrated memory module that offers low-power and energy-efficient performance, as well as high-speed access times when compared to similar memories of similar size. It also enables a wide range of functionality, including the ability to store and read data more quickly and efficiently.The 34AA02T-E/MS is typically used in applications that require data to be stored in a specific format, such as for a number of specific code functions, firmware systems and devices that require proactive data handling. It is designed to allow for optimized operation, low power consumption and a minimum of hardware needed for its operation.The 34AA02T-E/MS application field and working principle include an 8-bit or 16-bit read and write operation, random and sequential access, programmable addressing and control bits, built-in error checking, and support for a wide range of instruction words. It is available in two versions: the 8-bit version with a capacity of 512kwords per module and the 16-bit version with a capacity of 256kwords per module.The 34AA02T-E/MS memory consists of an array of memory cells organised into a read and write bus. The bus is accessed with a simple five-stage pipeline that includes a first stage of row and column address decoding, a second stage of instruction word decoding, a third stage of data buffering and CRC-checking, a fourth stage of data movement to and from the memory, and a fifth stage of data refresh.The data refresh stage ensures that data stored in the memory remains valid and will not be lost in the event of power failure. It also allows for improved power efficiency by reducing the amount of time required for read operations. The 5-stage pipeline also ensures a minimum amount of wait time between operations which results in faster response times for any read or write operations.The 34AA02T-E/MS is also optimised for maximum power efficiency, with the number of instruction cycles required for a read operation being significantly reduced on the 16-bit version compared to the 8-bit version. This reduces the amount of power required to access the memory and reduces the overall operating power consumption of the device.In terms of reliability, the 34AA02T-E/MS has an error rate of less than one in every million memory operations. This level of reliability is achieved through the use of address protocols, instruction decoding, ECC and error checking, as well as a range of other features such as programmability, operation safety and more.Finally, the 34AA02T-E/MS is designed with scalability in mind, allowing for easily scalable operation with a range of different memory sizes. This allows for flexible solutions to be designed for various applications, ensuring that the required functionality is available without sacrificing performance.The 34AA02T-E/MS is a highly versatile memory module that is designed for low-power and energy-efficient operations as well as high-speed access times. Its combination of features make it an ideal choice for a variety of applications in consumer electronics, embedded systems, and medical devices. It is also optimised for maximum power efficiency and has a high-level of reliability, making it an ideal solution for any system that needs reliable and high-performance operation.

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