34VL02/ST

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

34VL02/ST is a type of memory, specifically a static random-access memory (SRAM), which is a type of semiconductor device typically used as a computer’s main memory or random access memory. SRAM is characterized by fast and random access to data, allowing it to be used in applications such as high-speed computing, networking and embedded systems that require low latency and higher performance than entry-level DRAM. SRAMs usually provide larger capacities than DRAMs, but are limited in their ability to support high-volume applications.

34VL02/ST is a 2Mb asynchronous Static RAM, and consists of 384,000 bits organized as 2,048 words of 192 bits each. This makes it ideal for use in such applications as image processing, memory expansion, external cache memory and direct memory access (DMA) modules. In addition, it features fast access times of 70 and 120 nanoseconds which enable faster access times and higher performance than less advanced SRAMs.

The working principle of 34VL02/ST is relatively straightforward, as the device relies primarily on the writing and reading of 1s and 0s to store and retrieve data. A single SRAM cell consists of a pair of cross-coupled inverters, which act as a flip-flop. When data is written to the cell, the inverters latch the data and hold it in place until it is erased by an external pulse. That pulse causes the cell to switch from one state to another and the data stored in the cell is then read out as a voltage level.

Once data has been written, it can be read out of the corresponding cell by applying a voltage to its read port. This is known as a ‘read cycle’. During the read cycle, the inverters cross-couple so that the data stored in the cell is returned as the current on the read port. The data is then amplified and sent to the output register of the device.

SRAMs are further characterized by the way they are organized. 34VL02/ST, for example, is organized as four banks of four planes. When an external address is applied to the device, the appropriate bank and plane is determined and the specified memory cells are accessed. This allows data to be quickly accessed and read out of the device.

In addition to its fast access times, 34VL02/ST also features an array of timing characteristics. These include an asynchronous read access time of max 70 ns, an Asynchronous write access time of max 120 ns, and a write recovery time of max 50 ns. These allow for faster and more reliable access to data.

In conclusion, 34VL02/ST is a useful memory device for a range of applications including image processing, memory expansion, external cache memory and direct memory access (DMA) modules. It is characterized by fast and random access to data, making it well-suited to these applications, and also features fast access times, an array of timing characteristics and an organised architecture.

The specific data is subject to PDF, and the above content is for reference