416F406X3ITR Allicdata Electronics
Allicdata Part #:

416F406X3ITR-ND

Manufacturer Part#:

416F406X3ITR

Price: $ 0.34
Product Category:

Crystals, Oscillators, Resonators

Manufacturer: CTS-Frequency Controls
Short Description: CRYSTAL 40.610 MHZ 6PF SMT
More Detail: 40.61MHz ±15ppm Crystal 6pF 100 Ohms 4-SMD, No Lea...
DataSheet: 416F406X3ITR datasheet416F406X3ITR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.30511
Stock 1000Can Ship Immediately
$ 0.34
Specifications
Series: 416
Packaging: Tape & Reel (TR) 
Part Status: Active
Type: MHz Crystal
Frequency: 40.61MHz
Frequency Stability: ±30ppm
Frequency Tolerance: ±15ppm
Load Capacitance: 6pF
ESR (Equivalent Series Resistance): 100 Ohms
Operating Mode: Fundamental
Operating Temperature: -40°C ~ 85°C
Ratings: --
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Height - Seated (Max): 0.018" (0.45mm)
Description

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Crystals

Crystals are a type of solid object that form when atoms and molecules organize themselves in a certain pattern. They are used in many different fields from jewelry to electronics. The 416F406X3ITR application field and working principle is a type of crystal that is used by a wide variety of industries for many different uses.

The 416F406X3ITR is an oxide-based field-effect transistor (FET) that is constructed with a silicon-on-insulator (SOI) structure. It is capable of operating over a wide range of frequencies, including RF and microwave frequencies up to 8GHz. It is also capable of low-noise wide-band operation of up to 300MHz.

The 416F406X3ITR has a number of unique properties that make it well suited to many applications. One of its main advantages is its fast switching speed, which ensures that the device can be used for high speed digital communication applications, such as fiber-optic and digital video networking. In addition, the low power consumption and low noise figure of the device make it ideal for low-power, high-precision devices.

The 416F406X3ITR has a high level of linearity, which is important for digital communications applications. It also has a wide range of operational voltages, making it suitable for use with a variety of voltage levels. Furthermore, its wide-operating temperature range allows it to be used in a variety of environments, from extreme cold to extreme hot.

The 416F406X3ITR utilizes a number of features that ensure its versatility and reliability. These features include: its ability to perform at both low and high voltages, its low operating power consumption, its high level of linearity, and its wide-operating temperature range. These features make the device suitable for a variety of different applications such as RF and microwave circuits, signal conditioning, and data transmission.

The working principle of the 416F406X3ITR is based on the principles of the field-effect transistor (FET), where an electric field is generated by the application of an external voltage across a semiconductor material. When the voltage is applied, the electrons within the semiconductor move from areas of higher voltage to areas of lower voltage. This creates a current flow within the device, which is ultimately used to drive an output signal.

The 416F406X3ITR has many uses, ranging from communications to automotive applications. It is often used in automotive circuits where it can be used to provide battery charging, switching, and power conversion. In communications, it is often utilized as a low noise amplifier, used to amplify cellular and other RF signals. Additionally, it is widely used in fiber-optic systems, where its wide range of operational frequencies and its low noise figure make it an ideal candidate.

In summary, the 416F406X3ITR application field and working principle make it a highly versatile crystal for many applications. Its uses range from communications to automotive circuits. Its fast switching speed, low power consumption, wide range of operational frequencies, and low noise figure make it ideal for a variety of functions, from RF and microwave circuits to low-power, high-precision applications.

The specific data is subject to PDF, and the above content is for reference

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