4816P-T01-202LF

Number of Pins:	16
Height - Seated (Max):	0.094" (2.40mm)
Size / Dimension:	0.440" L x 0.220" W (11.18mm x 5.59mm)
Supplier Device Package:	16-SOM
Package / Case:	16-SOIC (0.220", 5.59mm Width)
Mounting Type:	Surface Mount
Applications:	Automotive AEC-Q200
Operating Temperature:	-55°C ~ 125°C
Temperature Coefficient:	±100ppm/°C
Power Per Element:	160mW
Series:	4800P
Resistor-Ratio-Drift:	--
Resistor Matching Ratio:	--
Number of Resistors:	8
Tolerance:	±2%
Resistance (Ohms):	2k
Circuit Type:	Isolated
Part Status:	Active
Packaging:	Tube

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Resistor Networks, Arrays

The 4816P-T01-202LF resistor memory device is a type of resistor array that is found in a variety of electronic applications. It is particularly well suited to use in digital electronic circuits, as it can easily be configured to store and access data in a variety of different ways. This makes it a very versatile component for use in a wide range of products.The 4816P-T01-202LF resistor memory device is made up of a large array of small, individually programmable resistors. This device is designed to offer a high level of flexibility in terms of its memory capacity, as each individual resistor can be programmed to store data. This makes it ideal for applications where a large amount of information needs to be stored and/or retrieved, such as in digital circuits or computer memory systems.The device consists of an array of resistors arranged in a row and column format, with each individual resistor having its own addressable location. The resistors in the array are connected to other elements of the circuit, such as a clock signal or control circuitry, and can be programmed to store and access data in a variety of different ways.In addition to its use in digital circuits, the 4816P-T01-202LF resistor memory device can also be used in analog circuits, as it is capable of storing and retrieving analog data. This makes it a useful component for a range of different applications, from monitoring and control systems to audio engineering and signal processing.The working principle behind the 4816P-T01-202LF resistor memory device is relatively simple. All data is stored in the individual resistors in the array, and can be accessed and modified by applying a voltage to the appropriate resistor in the array. This voltage is applied in order to change the resistance of the individual resistor, which in turn alters the data stored in that resistor.The data stored in each resistor can be accessed and modified by applying a voltage to the appropriate lead of that resistor. When the voltage is applied, it causes a change in the resistance of the resistor, and therefore the data stored within that resistor is changed. The voltage applied to the resistor can either be a positive or negative voltage, and this determines whether the data stored in the resistor is either written into or read out of the array.One of the major advantages of the 4816P-T01-202LF resistor memory device is its ability to store data in a non-volatile manner, meaning that it does not require a constant supply of electricity in order to maintain the stored data over time. This makes this device ideal for applications where long term data storage is necessary, such as in digital memory systems or long term monitoring systems.In summary, the 4816P-T01-202LF resistor memory device is a versatile component that is well suited to a variety of applications. Its ability to store and retrieve data in a variety of different ways makes it suitable for use in digital and analog circuits, and its non-volatile memory capabilities make it an ideal choice for long term data storage.

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