4P143F35IET Allicdata Electronics
Allicdata Part #:

4P143F35IET-ND

Manufacturer Part#:

4P143F35IET

Price: $ 0.00
Product Category:

Crystals, Oscillators, Resonators

Manufacturer: CTS-Frequency Controls
Short Description: CRYSTAL 14.318180 MHZ
More Detail: 14.31818MHz ±30ppm Crystal 20pF 40 Ohms HC-49/US
DataSheet: 4P143F35IET datasheet4P143F35IET Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: ATSSM4P
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Type: MHz Crystal
Frequency: 14.31818MHz
Frequency Stability: ±50ppm
Frequency Tolerance: ±30ppm
Load Capacitance: 20pF
ESR (Equivalent Series Resistance): 40 Ohms
Operating Mode: Fundamental
Operating Temperature: -40°C ~ 85°C
Ratings: --
Mounting Type: Surface Mount
Package / Case: HC-49/US
Size / Dimension: 0.512" L x 0.191" W (13.00mm x 4.85mm)
Height - Seated (Max): 0.205" (5.20mm)
Description

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Crystals are solid materials made up of structured molecules, atoms, and ions arranged in a regular geometric pattern throughout the material’s internal structure. They are used in a wide range of industries and applications. One such application is 4P143F35IET, which is a form of field-effect transistor that is used in electronic circuits and systems.

The 4P143F35IET uses a field effect that is achieved by the application of a gate voltage. When the gate voltage is applied, electrons in the channel region of the transistor move due to the application of electric fields. This creates an electric field in the inverted-L channel of the transistor, which changes the conductivity of the channel region. The application of a gate voltage thus modulates the electrical characteristics of the channel region and allows the transistor to function as an amplifier or switch.

The 4P143F35IET transistor is also known as a “Floating Gate FET” as the gate voltage that modulates its electrical characteristics is not directly connected to the channel region. Instead, the gate voltage is applied externally to the transistor through a metal line called the “gate line”. This allows the transistor to operate at higher frequencies than conventional FETs. The 4P143F35IET also offers enhanced performance and is used in applications that require higher performance transistors such as high speed switching, power supply regulation, and signal conditioning.

The 4P143F35IET is also known for its low power consumption, and as such is used in applications such as low power communication systems and for small functions in portable equipment. It is also used in memory devices, as its low power consumption makes it ideal for storing information.

The 4P143F35IET is a versatile field-effect transistor that is used in a wide range of applications and industries. Its ability to modulate its electrical characteristics through the application of gate voltage makes it ideal for a variety of applications. Furthermore, its low power consumption makes it ideal for use in portable devices, memory applications, and low power communication systems.

Whether it is used in communication systems, portable devices, memory devices, or any other application, the 4P143F35IET offers enhanced performance and excellent low power consumption. It is this combination of features which makes the 4P143F35IET a perfect choice for use in many industries and applications.

The specific data is subject to PDF, and the above content is for reference

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