4P160F35IDT

4P160F35IDT Application Field and Working Principle

4P160F35IDT is a monolithic quad FET switch with an internal static control that offers low on-resistance and low on-capacitance with high power and high frequency operation. This device can switch and amplify signals from DC to GHz frequencies, making it suitable for a wide range of applications. It employs four N-channel MOSFETs combined with a matched-resistor network in a simple to use, single-piece package.

This device is designed to switch and amplify signals with a low distortion using various materials and configurations. Its internal construction features four N-channel MOSFETs arranged in a cross-coupled configuration. This arrangement not only minimizes distortion, but also reduces power consumption due to the specific combination of required elements. The device also features a low stand-by current, which further reduces power consumption and EMI.

The 4P160F35IDT can be used in a wide range of applications, from RF communications to cellular, from automotive to medical, from audio to home automation, and other applications such as military communications, test & measurement and satellite communications.

Applications of 4P160F35IDT

• RF communication systems
• Cellular systems
• Automotive systems
• Medical systems
• Audio systems
• Home automation systems
• Military communication systems
• Test & measurement systems
• Satellite communication systems

Working Principle

The 4P160F35IDT utilizes four N-channel MOSFETs combined with a matched-resistor network in a single-piece package. The device works by applying a voltage to the control pin and transferring it to the source pins of the MOSFETs. When the control voltage applied is below the threshold value, the MOSFETs are at the OFF state, blocking any current from flowing. When the control voltage exceeds the threshold value, the MOSFETs are switched to the ON state, allowing current to flow. This arrangement of MOSFETs provides a low distortion, low power consumption, and low EMI.

The 4P160F35IDT can be used to switch signals from DC to GHz frequencies with a low distortion. The device offers an extremely low on-resistance and on-capacitance, minimizing distortion and power consumption. The device also features a low stand-by current, which further reduces power consumption and EMI.

In summary, 4P160F35IDT is a monolithic quad FET switch with an internal static control that offers low on-resistance and low on-capacitance with high power and high frequency operation. It can be used in a variety of applications, from RF communications to cellular, from automotive to medical, from audio to home automation, and other applications such as military communications, test & measurement, and satellite communications. It utilizes four N-channel MOSFETs combined with a matched-resistor network in a single-piece package, providing a low distortion, low power consumption, and low EMI.