Allicdata Part #: | 5.0SMDJ40AM6G-ND |
Manufacturer Part#: |
5.0SMDJ40A M6G |
Price: | $ 0.69 |
Product Category: | Circuit Protection |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | TVS DIODE 40V 64.5V DO214AB |
More Detail: | N/A |
DataSheet: | 5.0SMDJ40A M6G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
6000 +: | $ 0.63187 |
Specifications
Voltage - Clamping (Max) @ Ipp: | 64.5V |
Supplier Device Package: | DO-214AB (SMC) |
Package / Case: | DO-214AB, SMC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 5000W (5kW) |
Current - Peak Pulse (10/1000µs): | 77.6A |
Series: | 5.0SMDJ |
Voltage - Breakdown (Min): | 44.4V |
Voltage - Reverse Standoff (Typ): | 40V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Description
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TVS - Diodes: 5.0SMDJ40A M6G application field and working principle
TVS (Transient Voltage Suppression) Diodes are designed with the intent of suppressing high-voltage, high-energy transients which can damage delicate electronic equipment. The main applications for TVS diodes are over-voltage, over-current, and electrostatic discharge protection. The 5.0SMDJ40A M6G is a three-terminal silicon avalanche diode specifically designed for temperature-stable, high-speed protection.This diode is particularly useful in applications that require minimal leakage current with fast switching times. It is suitable for a variety of applications, such as surge protection and telecom systems, automotive power converter circuits, and protected circuits.Working principle
The 5.0SMDJ40A M6G is designed to provide high-speed surge protection by providing an avalanche junction. In normal operation, the diode functions as a semiconductor element that follows a specific current-voltage characteristic, and it is capable of blocking currents below a certain value.When voltages exceeding the diode\'s breakdown voltage (Vbr) are applied, the diode becomes forward-biased and allows a surge of current. This surge causes the diode\'s junction region to quickly form an avalanche of charge carriers, which is capable of diverting current surges to Earth.In a surge event, the current and voltage overshoots the diode\'s normal limits. If left unchecked, this can damage components and circuits. The avalanche breakdown occurring in the diode junction serves to absorb the sudden change in current and voltage. When the surge ends, the diode returns to its original off state.Advantages of the 5.0SMDJ40A M6G
The 5.0SMDJ40A M6G offers a variety of advantages over other transistors and diodes, such as:1. Low-capacitance design, which enables fast switching times.2. Low-voltage and high-current capability.3. Low leakage-current characteristics.4. Temperature stability.5. Robust design, ensuring reliable surge protection.6. Low noise and signal distortion.The 5.0SMDJ40A M6G is a 3-terminal silicon avalanche diode designed to provide fast switching times with high current and voltage protection characteristics. With its low-capacitance design and temperature stability, this diode is suitable for a variety of applications, such as automotive, unprotected circuits, telecom systems, and surge protection.The specific data is subject to PDF, and the above content is for reference
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