5KP13C-B Allicdata Electronics
Allicdata Part #:

5KP13C-B-ND

Manufacturer Part#:

5KP13C-B

Price: $ 1.53
Product Category:

Circuit Protection

Manufacturer: Littelfuse Inc.
Short Description: TVS DIODE 13V 22.58V P600
More Detail: N/A
DataSheet: 5KP13C-B datasheet5KP13C-B Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
100 +: $ 1.38865
Stock 1000Can Ship Immediately
$ 1.53
Specifications
Voltage - Clamping (Max) @ Ipp: 22.58V
Supplier Device Package: P600
Package / Case: P600, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): --
Series: 5KP
Voltage - Breakdown (Min): 13.64V
Voltage - Reverse Standoff (Typ): 13V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes

Transient Voltage Suppression (TVS) Diodes are a type of semiconductor device, specifically designed to protect equipment or its components from voltage transients generated by lightning or induced by other sources such as electrostatic discharges. These devices operate by clamping any unexpected incoming voltage spikes and dissipating any additional energy generated by the spike in order to protect sensitive electronics.The 5KP13C-B is a TVS Diode designed for applications, such as high-current, low-capacitance transient suppression. This type of diode is ideal for Circuit Board protection against over-voltage transients from 10V to 40V.

Working Principle

The 5KP13C-B is a Unidirectional device, meaning that it will only function correctly when connected oriented in the right direction. This device is made of three main components, two diodes connected in anti-parallel and an N-channel MOSFET.When the normal line voltage is applied, no additional current is drawn. However, when a transient voltage appears, the protection diode will turn on triggering the N-channel MOSFET to conduct. The N-channel MOSFET’s drain-source channel will act as a low resistance shunt path which will pull the voltage to a safe level. Once the transient is gone, the N-channel MOSFET will turn off and the diode will go back to its normal off state. The N-channel MOSFET used on the 5KP13C-B can support higher power dissipation than the regular Silicon diodes due to the wider area of the gate. This makes it able to draw more current and dissipate the additional energy generated during a transient, allowing it to effectively protect against voltage spikes while also providing high-current protection.

Application Field and Utilization

The 5KP13C-B is used in a variety of application fields such as Automotive, Industrial, and Avionics. Its low capacitance, low leakage, and energy handling capabilities make it an ideal choice for high-speed data line protection. The 5KP13C-B is also suitable for signal-line protection in large-scale infrastructure systems such as server rooms. Its robustness allows it to effectively protect against high-energy voltage transients created by lightning strikes or electrostatic discharges on outside wiring, keeping sensitive electronics safe and preserving both current and data flow. In conclusion, the 5KP13C-B is a versatile TVS Diode capable of providing reliable, high-current protection against voltage transients. It can be utilized in a variety of application fields, specifically designed to protect sensitive electronics from high-energy transients.

The specific data is subject to PDF, and the above content is for reference

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