64020H Allicdata Electronics
Allicdata Part #:

64020H-ND

Manufacturer Part#:

64020H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: RF POWER TRANSISTOR
More Detail: RF Transistor
DataSheet: 64020H datasheet64020H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

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64020H application field and working principle

The 64020H is a high-voltage, high-speed planar silicon power transistor module specifically designed for broadcasting applications. It has been designed specifically to deliver high-voltage, high-speed performance, with emphasis on improved load-matching capabilities, improved power efficiency and extended frequency range. This transistor module is manufactured using a planar technology, which allows for greatly improved uniformity and cost-efficiency in the production process, resulting in a faster and more reliable product.

The 64020H is intended for use in television broadcasting applications in which high-frequency switching amplifiers are required. It is suitable for use from 1 MHz to 2.3 GHz, providing up to 2.7 kW of power output. It is also suitable for use with digital RF applications such as OTCRS, where low on-state losses and wide-frequency range are desired. In addition, it is also suitable for use with high-power amplifiers such as TWTAs, which require high voltage and fast switching time.

The 64020H is a powered device, as it requires a supply voltage of up to 1200 V DC. It is capable of driving 5 A of load current and delivering a maximum voltage of 50 V. It has a thermal resistance rating of 1.2 °C/W, which allows the device to work at an ambient temperature of up to 85 °C. The device has a maximum dielectric strength of 2400 V and an insulation resistance of 5 × 109 MΩ. The 64020H also features a harmonized output impedance and wide bandwidth which enables higher switching speeds compared to other transistors of similar specifications.

The working principle of a 64020H power transistor module is based on the injection of holes and electrons into the base region. The base region is doped with an impurity such that the majority carriers are electrons, but some of the minority carriers are holes. When the base voltage is increased, the electrons in the base are repelled, allowing more holes to be injected into the base. This increases the ratio between the holes and electrons, allowing more current to flow through the collector-emitter path. As the base voltage is further increased, more current flows, resulting in a proportionally larger output power.

The 64020H transistor module offers many advantages over conventional transistors, such as improved load matching, power efficiency and wide frequency range. It is ideal for use in broadcasting applications, as it can handle high voltages and is capable of switching rapidly. Furthermore, its thermal resistance rating of 1.2 °C/W makes it suitable for applications that require operation at high temperatures. All in all, the 64020H is an excellent choice for broadcasters who require reliable and powerful transistors that can handle high-frequency switching amplifiers.

The specific data is subject to PDF, and the above content is for reference

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