Allicdata Part #: | 66068B-ND |
Manufacturer Part#: |
66068B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF POWER TRANSISTOR |
More Detail: | RF Transistor |
DataSheet: | 66068B Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
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Transistors - Bipolar (BJT) - RF
66068B application field and working principle
The 66068B bipolar junction transistor (BJT) is a type of transistor that is commonly used for radio frequency (RF) applications. It is a high gain, low noise transistor that is well suited for use in various types of amplifiers. The 66068B has a wide range of applications, including components for amplifiers, receivers, and oscillators. It is also commonly used for communications equipment, power supplies, and light emitting diode (LED) drivers.
The 66068B is designed to enhance performance in general RF applications. It is a Darlington transistor, which provides a high current gain. This makes it ideal for applications that require high current gains, as it has a low gain-bandwidth product. This also gives it low noise levels, making it ideal for sensitive applications, such as communications systems.
The 66068B transistor has a three-terminal PNP structure, which utilizes a collector, emitter, and base. When applying a small current (base current) to the base, it will control the current flow between collector and emitter (collector current). The ratio of the base current to the collector current is known as the current gain and is represented by the symbol hFE.
The 66068B operates at a wide frequency range, from 10KHz to 50MHz, depending on the application. It also has a wide range of input signal levels, making it ideal for amplifying small signals. Furthermore, the device is designed to handle large AC currents, making it suitable for signal conditioning circuits, such as in power supplies.
The 66068B can also handle high voltages and is designed with a low saturation voltage. This allows it to be used for high voltage, high current applications. Additionally, the device has a low operating temperature, making it suitable for environments with extreme temperatures.
The 66068B is a popular transistor for radio frequency applications because of its high gain and low noise characteristics. It is well suited for use in a wide range of RF applications, including amplifiers, receivers and oscillators. Additionally, it is an efficient device for communication and power applications, as well as for LED drivers.
The specific data is subject to PDF, and the above content is for reference
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