Allicdata Part #: | 66112-ND |
Manufacturer Part#: |
66112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF POWER TRANSISTOR |
More Detail: | RF Transistor |
DataSheet: | 66112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
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Transistors are electronic components used to amplify and switch electrical signals in a variety of devices. Bipolar junction transistors (BJTs) are one type of transistor that are widely used. This article will discuss 66112 application field and working principle of BJTs.
Physical Structure and Working Principle
BJTs are three-terminal devices with two bases and one emitter. A BJT is basically a controlled current source, with the ability to switch or amplify an incoming signal. The controlled current source is accomplished through a PN junction between two different semiconductor materials, where one junction is a single layer of semiconductor atoms, and the other is a thicker layer of atoms.
The base region of the BJT affects the current flow from the emitter to the collector due to the amount of voltage applied to the base. This is known as “current gain” and is given a numerical value known as the “beta ratio.” When a small base current is applied to the BJT, a larger current is allowed to flow from the emitter to the collector. This larger current is known as the “collector current” and it is this current that is used to control or switch the signal.
66112 Application Field
The 66112 BJT is a very versatile and common device used in a variety of applications. It is believed to be the first RF transistor ever produced and is still used in many RF applications today. It is a medium power, linear, NPN silicon BJT with a wide operating temperature range. It has a maximum collector current of 1A and a maximum power dissipation of 750mW.
The 66112 BJT is used in a variety of applications, including RF amplifiers, receivers, oscillators, and many more. Its wider operating range of temperature and higher maximum collector current makes it ideal for use in high power systems. It is well suited for applications ranging from FM transmitters and receivers, cellular base stations, Ham radios, and many more. Its wide operating range of temperature also makes it suitable for use in low power systems.
Conclusion
The 66112 BJT is a versatile and common device used in a variety of applications. It has a wide operating temperature range, making it suitable for high and low power systems. Its medium power, linearity, and wide operating temperature range makes it ideal for RF applications such as FM transmitters and receivers, cellular base stations, and Ham radios. The 66112 BJT’s working principle is based on the current gain achieved through the base junction of the device.
The specific data is subject to PDF, and the above content is for reference
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