695D685X0035F2T Capacitors

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Tantalum capacitors offer a unique combination of features not found in other types of capacitors. 695D685X0035F2T tantalum capacitors offer superior performance and are widely used in a variety of applications. The 695D685X0035F2T is a chip tantalum capacitor with low ESR and high capacitance, making it suitable for space-constrained applications that require high-density energy storage.

Tantalum capacitors have excellent stability against environmental extremes such as temperature and moisture. This makes them suitable for a wide range of industrial, medical, military, and aerospace applications. In addition, they have very high dielectric strength and are non-polar, meaning that they can be operated in both AC and DC applications.

The 695D685X0035F2T is a chip tantalum capacitor with a voltage rating of 35V and a capacitance of 10µF. It has a low Equivalent Series Resistance (ESR) of 2Ω and a high capacitance density, making it suitable for use in space-constrained applications. The 695D685X0035F2T also has very low self-inductance, allowing it to be used in high-frequency circuits. The 695D685X0035F2T is available in a variety of packages, making it suitable for a wide range of applications.

The 695D685X0035F2T is typically used in high-voltage power and RF circuits, as well as in ultra-low-noise and high-resolution signal processing applications. It is also suitable for use in high-temperature and automotive applications. The 695D685X0035F2T has a limited operational temperature range, so it should not be used in applications where ambient temperatures exceed 85 °C. The 695D685X0035F2T also has a limited range of capacitance values, so it is not suitable for applications requiring high-capacity or low-voltage DC couplings.

The working principle of the 695D685X0035F2T is based on the electrochemical principle of double layer capacitance. A thin film of tantalum oxide is applied to the capacitor’s surface and forms a dielectric layer. A second metallic layer is applied inside the oxide layer, forming an electrolytic tank. The two layers create a capacitor with a high capacitance and low ESR.

The 695D685X0035F2T is a reliable and cost-effective way to store energy and provide a high capacitance in space-constrained environments. It is suitable for use in a wide range of applications and can operate in temperatures ranging from -55 °C to 85 °C. The 695D685X0035F2T has a low ESR and high capacitance density, making it ideal for use in high-voltage, high-temperature, and RF applications.

The specific data is subject to PDF, and the above content is for reference