Allicdata Part #: | 6MS24017P43W39873NOSA1-ND |
Manufacturer Part#: |
6MS24017P43W39873NOSA1 |
Price: | $ 14.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IGBT STACK A-MS3-1 |
More Detail: | IGBT Module Three Phase Inverter 1700V 1100A 1450... |
DataSheet: | 6MS24017P43W39873NOSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 13.23000 |
Series: | ModSTACK™ 3 |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 1100A |
Power - Max: | 14500W |
Vce(on) (Max) @ Vge, Ic: | -- |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -25°C ~ 55°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Transistors - IGBTs - Modules
The 6MS24017P43W39873NOSA1 module is a type of Insulated Gate Bipolar Transistor (IGBT) module. It is designed to switch and control large amounts of power in for applications requiring fast switching, improved motor control, and more efficient power conversion.
Application Field
The 6MS24017P43W39873NOSA1 module is perfect for applications where large currents and very fast switching speeds are needed. This IGBT module is widely used in medium and high voltage motor control, soft switching power converters, PFC, soft switching, UPS, solar inverters, elevators and traction, welding machines, and many other industrial applications.
Working Principle
The 6MS24017P43W39873NOSA1 is an Insulated Gate Bipolar Transistor. It is composed of two silicon dies separated by a thin insulating layer, forming the basis of the module. This module has a larger gate drive voltage than conventional insulated gate bipolar transistors (IGBTs), allowing it to switch more quickly and for greater control of current and power. The module also uses a more highly advanced structure than some IGBTs, allowing for more efficient power handling and cooling.
The insulated gate of the IGBT module is immediately driven by an external gate driver, providing an almost instant response to high speed ACsignals from the application. It then passes the voltage through the gate directly on to the transistor\'s body, resulting in a very fast switching speed. This helps to produce an excellent power efficiency and ideal for complex applications.
Conclusion
The 6MS24017P43W39873NOSA1 module is an advanced type of insulated gate bipolar transistor (IGBT) module with a high drive voltage and faster switching speeds than conventional IGBTs. This makes it ideal for applications that require fast switching and greater control of power, such as motor control and power management in solar inverters and welding machines.
The specific data is subject to PDF, and the above content is for reference
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