Allicdata Part #: | 6MS30017E43W40372NOSA1-ND |
Manufacturer Part#: |
6MS30017E43W40372NOSA1 |
Price: | $ 24.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IGBT STACK A-MS3-1 |
More Detail: | IGBT Module Three Phase Inverter 1700V 1800A 2914... |
DataSheet: | 6MS30017E43W40372NOSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 22.05000 |
Series: | ModSTACK™ HD |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 1800A |
Power - Max: | 29140W |
Vce(on) (Max) @ Vge, Ic: | -- |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -25°C ~ 55°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Transistors - IGBTs - Modules
6MS30017E43W40372NOSA1 is an Insulated Gate Bipolar Transistor (IGBT) Field Stop (VF) module. It is a surface mount technology (SMT) package module, with a nomimal DC operating voltage of 1700V. Its current rating is 300A. This IGBT is manufactured by Mitsubishi Electric Corporation, and is part of the 6MS300 Series.
Application Field and Working Principle
The 6MS30017E43W40372NOSA1 is used in a wide range of power semiconductor applications, including industrial motor control, high power conversion, and pulse power supply. It is designed to offer a high level of ruggedness and dependable performance under varying conditions. Its main applications include commercial AC drives, electric vehicle charging systems and automotive control systems.
The 6MS30017E43W40372NOSA1\'s key advantages include its low conduction losses, fast switching speeds, high power densities and low EMI/RFI emission levels. This IGBT module offers superior short-circuit robustness, as well as low tail current ratings, which increases its efficiency and reliability.
The 6MS30017E43W40372NOSA1 is a three-phase IGBT module, composed of six individual IGBTs. It operates based on a bipolar transistor switching system. When a positive voltage is applied to the gate, it opens the transistor\'s N-type channel, which will allow the current to flow between the emitter and collector. Conversely, when the gate voltage is decreased, the N-type channel is closed and the current can no longer flow. The current flow is regulated by the gate, enabling precise control of the switching operation.
This 6MS30017E43W40372NOSA1 module also features a high-speed integrated clamp network, which insulates the transistor\'s gate from any potential transient voltages. This insulation greatly reduces the risk of device failure and improves the module\'s long-term performance.
The specific data is subject to PDF, and the above content is for reference
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