6PS18012E4FG38393NWSA1 Discrete Semiconductor Products |
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Allicdata Part #: | 6PS18012E4FG38393NWSA1-ND |
Manufacturer Part#: |
6PS18012E4FG38393NWSA1 |
Price: | $ 9.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IGBT STACK A-PSF-1 |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | 6PS18012E4FG38393NWSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 8.19000 |
Series: | * |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Vce(on) (Max) @ Vge, Ic: | -- |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Modern technology has made a significant impact on the way industry is being run these days. Automation and enhanced functioning of specific tasks have not only improved the production process but also the quality of output products. The 6PS18012E4FG38393NWSA1 is an IGBT module that has become a primary component in many industrial and commercial technological products. It is commonly used in a range of industrial processes including lift chairs, electric cars, motors and other projects related to electronics.
The IGBT 6PS18012E4FG38393NWSA1 module is made with a combination of different transistors such as Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) and an Insulated Gate Bipolar Transistor (IGBT). This enables for a higher current level and a lower switching loss, which is essential for maintaining optimal performance. As such, the 6PS18012E4FG38393NWSA1 IGBT modulecan provide high performance and low power consumption.
As stated earlier, the 6PS18012E4FG38393NWSA1 IGBT module is mainly used in the production of heavy consumption of power in industrial processes and applications. The IGBT module has a high performance rating, allowing it to reduce switching losses and total energy consumption in a wide range of applications and products. It is amongst the most energy-efficient semiconductor technologies available to industry and is used in many industrial applications due to its superior performance.
For the 6PS18012E4FG38393NWSA1 IGBT module, the working principle is defined by the combination of MOSFET and IGBT technology. When an electric current passes through the components, the MOSFET acts as an on/off switch for controlling the voltage and current in the circuit, while the IGBT helps in regulating the conduction of electricity. Therefore, the 6PS18012E4FG38393NWSA1 IGBT modulehas the capability to handle higher levels of current and low switching losses, which makes it highly preferable as a component in industrial applications.
The 6PS18012E4FG38393NWSA1 IGBT module is specified for operation in the following voltage categories: 3.3V, 5V, and 10V. As for the operating temperature range, the module can sustain the temperature of the environment and ambient given that the power dissipation does not exceed the specified thermal shutdown. Also, its use with an external capacitor is essential for minimizing noise and transients while ensuring that the module functions at its maximum potential.
Overall, the 6PS18012E4FG38393NWSA1 IGBT moduleis highly recommended for anyone who is looking to get the maximum performance and energy efficiency in their industrial applications. It is the perfect choice for all industrial requirements due to its combination of MOSFET and IGBT technology, allowing for higher current capacity, low switching loss and minimal energy consumption.
The specific data is subject to PDF, and the above content is for reference
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