7007S20JI

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	256Kb (32K x 8)
Write Cycle Time - Word, Page:	20ns
Access Time:	20ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	68-LCC (J-Lead)
Supplier Device Package:	68-PLCC (24.21x24.21)

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Introduction

The 7007S20JI is a semiconductor memory device developed by Texas Instruments and marketed as a Flash memory. It is used in a variety of applications, such as automotive, telecommunications, security, automotive applications, aviation, and industrial. It is suitable for systems that require high-speed, low-power dynamic random access memory (DRAM) with low latency.

Application Field

7007S20JI memory is used in a variety of applications because it is a highly reliable, low-power semiconductor memory device. It is suited for high-speed, real-time applications and industrial systems that require continuous performance and low power. It is also popular in automotive, telecommunications and security applications, due to its low-latency and long-term reliability.In particular, the 7007S20JI memory is well-suited for automotive applications, including powertrain, body control, chassis and infotainment systems. It is also used in the development and testing of automotive components, such as automated transmissions, automatic stop/start systems, fuel systems and emission control systems. In terms of telecommunications and security applications, the 7007S20JI memory is well-suited for security systems, communications platforms and tracking systems. It is also used in aviation and industrial applications, such as tracking and monitoring systems, and for high-performance computing applications.

Working Principle

The 7007S20JI memory is based on floating-gate cells, which operate by having a source of electrons which are held between two gates. When a voltage differential is applied to one or both of the floating gates, the trapped electrons create a charge that affects the cell’s threshold voltage, which in turn affects the current on which the cell operates. The memory device operates by charging and discharging the cell’s floating-gate cells in order to represent the different states that are used in computer memory applications. The 7007S20JI memory has two control signals: one is used to control the charge on the floating-gate cell and the other is used to sense the cell’s state. When the voltage differential across the cell is high, the charge is allowed to accumulate, which represents a 0, and when the voltage differential across the cell is low, the charge is allowed to disperse, representing a 1. In terms of its architecture, the 7007S20JI memory has a portion which is dedicated to data storage and a portion dedicated to programming the memory. The data portion consists of the floating-gate cells and control signals and the programming portion consists of the programming logic and control signals.

Conclusion

In conclusion, the 7007S20JI memory is a highly reliable, low-power semiconductor memory device which is used in a variety of applications, including automotive, security, and industrial applications. It is based on floating-gate cells and operates by having a source of electrons that are held between two gates, and two control signals used to control the charge on the floating-gate cell and sense the cell’s state. It has a portion dedicated to data storage and a portion dedicated to programming the memory.

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