
Allicdata Part #: | 7007S25PFI8-ND |
Manufacturer Part#: |
7007S25PFI8 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 256K PARALLEL 80TQFP |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 256Kb (32... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 80-LQFP |
Supplier Device Package: | 80-TQFP (14x14) |
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Memory is a type of computer device used to store digital data on a short-term or long-term basis. There are a variety of memory technologies for storing digital information, such as RAM, ROM and flash memory. Among these, the 7007S25PFI8 is a type of flash memory that has a wide range of applications and uses a simple working principle.
Applications
The 7007S25PFI8 is a non-volatile flash memory chip manufactured by Toshiba. It can be used in various applications, including mobile phones, digital cameras and MP3 players. In mobile phones, it is used as program memory to store the phone\'s operating system, while in digital cameras and MP3 players it can be used to store pictures and music files. The chip has low power consumption and can operate at a wide range of temperatures, making it suitable for a variety of applications.
Working Principle
The 7007S25PFI8 flash memory uses a simple working principle. It consists of an array of memory cells, each of which can be programmed to store a single bit of data. These memory cells are connected to a control circuit that reads and writes data to the memory cells. The control circuit also contains circuits to program, erase, and detect errors in the data stored in the memory cells. The flash memory also has a
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