7008L35PF8 Allicdata Electronics
Allicdata Part #:

7008L35PF8-ND

Manufacturer Part#:

7008L35PF8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 512K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 512Kb (64...
DataSheet: 7008L35PF8 datasheet7008L35PF8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (64K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: IDT7008
Description

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The 7008L35PF8 is a type of memory device classified under the category of non-volatile, low-density flash memory. This type of device is ideal for storing data that may change frequently, as well as data that needs to be retained in the event of a power outage. The 7008L35PF8 is a particularly popular device for embedded applications due to its low power consumption, high performance, and reliable design.

The 7008L35PF8 is based on a NAND flash memory architecture, allowing for significant data storage densities at a lower cost. This device utilizes a 3V voltage level, which makes it ideal for mobile applications, where lower power consumption is a priority. It also has write latency of up to 6.75 microseconds, as well as read latency of up to 10.5 microseconds, making it extremely fast and reliable.

The 7008L35PF8 functions in a similar way to other types of memory devices, relying on a two-transistors-per-cell structure to store data bits. The device stores data in the form of electrical charges in a silicon substrate, relying on the two transistors to store the data. When current is applied, the voltage level crossing a certain threshold will trigger the device to release the charge from the element. This is known as an erase operation and is used to clear the memory of current data. On the other hand, when the same charge is applied to the device, it will cause the passage within the element to close, enabling the data to be stored. This process is known as the program operation, and is employed to write data to the device.

The 7008L35PF8 can store up to 256MB of data, making it ideal for a variety of embedded applications. It is commonly used in digital cameras and multimedia devices, as well as in other consumer electronics such as GPS systems, portable music players, and even medical devices. It is also used in automotive and industrial applications, such as in fuel control systems, data loggers, and remote meter reading systems.

In addition to its storage capabilities, the 7008L35PF8 is also equipped with a number of security features that make it an ideal choice for critical data storage applications. It is designed with built-in hardware and software encryption, as well as password security, to protect the data from unwanted access. It also features a write-once memory feature, which prevents accidental erasure or data alteration.

In summary, the 7008L35PF8 is a reliable and cost-effective non-volatile memory device that is well suited for a variety of embedded applications. It offers high performance, low power consumption, and a number of security features, making it an attractive choice for many applications. In addition, its two-transistor-per-cell structure ensures reliable data storage, while its write latency and read latency times make it an ideal choice for applications that require rapid data access.

The specific data is subject to PDF, and the above content is for reference

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