7009L20PFI Allicdata Electronics
Allicdata Part #:

7009L20PFI-ND

Manufacturer Part#:

7009L20PFI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 1Mb (128K...
DataSheet: 7009L20PFI datasheet7009L20PFI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: IDT7009
Description

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7009L20PFI is a type of memory device and its application fields and working principles are quite distinct from those of others. The 7009L20PFI is an advanced non-volatile memory device and it is manufactured using a 20 nm-SiGe Flip-Chip process. This type of memory is ideal for applications such as high speed memory, high density memory and small form factor memory, as well as for applications that require ultra low power operation.

In terms of its application field, the 7009L20PFI can be used to store data, programs and software. It can also be used in consumer electronics such as digital cameras, cell phones, media players and more. Additionally, this type of memory has applications in industrial control, medical instrumentation, and automotive systems. It is also used in aerospace, defense and other fields that require high performance memory.

In regards to its working principle, the 7009L20PFI is composed of an array of 6x6x4 cells that are connected in a matrix. Each cell consists of a pair of transistors that are arranged in a symmetrical configuration. The transistors together form a memory cell, and by applying appropriate voltage across the transistors, they can be used to hold a single bit of information. The stored information will remain stored until the power is turned off, making this type of memory non-volatile.

In order to retrieve information from the memory device, voltage is again applied across the transistors and this provides access to the data that was stored there. However, since much less power is used to access the memory device than to store data onto the device, the access speed of the device is much faster than that of its storing speed. This makes the 7009L20PFI ideal for applications that require high speed data access.

In conclusion, the 7009L20PFI is a type of memory device that is suited for applications demanding high speed and low power consumption memory. It is composed of an array of transistors that are arranged in a symmetrical manner, allowing for the storage and retrieval of data with minimal energy consumption. Due to its advantages, the 7009L20PFI has found applications in many different fields, from consumer electronics to industrial control.

The specific data is subject to PDF, and the above content is for reference

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