7016S35J

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

7016S35J Memory

7016S35J memory is a type of static random-access memory (SRAM) which integrates all of the necessary components to create non-volatile storage and can be used in a variety of situations and applications. It is designed with a small footprint in mind, making it suitable for use in embedded applications as it provides reliable data storage without taking up a disproportionate amount of space.

Application Fields

7016S35J memory is used in a broad range of applications, such as automotive, industrial, aerospace and defense, consumer, and medical. In the automotive industry, it is often used to store maps, configurations, multimedia files, and other related data. Similarly, it is used in the industrial sector to store data related to machine operation in equipment such as robots and HMI panels. In the aerospace and defense industry, 7016S35J memory is used to store essential data about aircraft and weapons systems. Additionally, it is also used to store data in consumer devices such as smartphones, laptops, and gaming consoles.

Working Principle

The working principle of 7016S35J memory is based around latch-based SRAM cells, also known as flip-flop cells. Each latch-based cell consists of six transistors and can store a 6-bit word of data. These cells can be connected in series, allowing for multiple words of data to be stored in a single memory device. Data is written to these cells in a non-volatile manner, meaning that the stored data will remain there even when the power to the system is turned off. As such, it allows for systems which can be quickly restarted without needing to reload the data.

7016S35J memory is also designed with density in mind, allowing it to pack as much data into a single chip as possible. This is achieved through a modified architecture which interconnects the cells in a certain manner, allowing multiple words to be stored in a single chip. Additionally, advanced packaging techniques used by manufacturers allow for multiple chips to be connected in a single package, further increasing the amount of data which can be stored.

In terms of performance, 7016S35J memory is designed to offer both fast access times and low power consumption. High-speed operation is achieved through a special CMOS memory architecture which uses bit lines for signal conduction and ensures quick transfers of data. Low power consumption is achieved through sleep current modulation, which allows the device to switch between different power modes and conserve energy.

Conclusion

7016S35J memory is a reliable, non-volatile SRAM which is used in a variety of fields and applications. It is designed with a small footprint and is suitable for embedded applications. Additionally, its modified architecture allows for data to be stored in an efficient manner, while advanced packaging techniques can further increase storage capacity. Finally, it offers both fast access times and low power consumption due to its special CMOS memory architecture and sleep current modulation.

The specific data is subject to PDF, and the above content is for reference