Allicdata Part #: | 7016S35JI-ND |
Manufacturer Part#: |
7016S35JI |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 144K PARALLEL 68PLCC |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 144Kb (16... |
DataSheet: | 7016S35JI Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 144Kb (16K x 9) |
Write Cycle Time - Word, Page: | 35ns |
Access Time: | 35ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 68-LCC (J-Lead) |
Supplier Device Package: | 68-PLCC (24.21x24.21) |
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Memory is an essential component when it comes to computer architecture. A memory device, like the 7016S35JI, is used to store data and instructions that must be remembered by the computer. The 7016S35JI is a 1-bit RAM cell that utilizes static random access memory (SRAM) technology. It is capable of storing a single bit of data, such as 1 or 0, and can be used to design a variety of electronic systems.
The 7016S35JI has a variety of applications in electronics. It can be used to store critical data on memory cards, which can be used in a multitude of devices, from phones to laptops and tablets. The 7016S35JI can also be used to create complex circuits in consumer electronics, like smart home devices, or in medical, industrial, and communications applications. Additionally, the 7016S35JI is suitable for use in robotics and automation systems.
The 7016S35JI features a durable construction and provides fast data access. The device is composed of a junction of several transistors, as well as small capacitors that are all connected together. This combination creates a memory cell that is capable of retaining a single bit of data. As such, it can maintain an electrical current or voltage that is representative of the bit, regardless of time or power fluctuations. This makes it ideal to store digital data that must be remembered over time in volatile environments.
The 7016S35JI works by exploiting the concept of write and read operations. When a bit of data is written to the device, the circuit is charged and current flows through the junction. However, when a write operation is not being performed, the stored data is locked in place, as current and voltage cannot escape the cell. This is how the device is able to maintain the stored data and remember it over time.
When a data read operation is performed, the amount of current passing through the junction is measured by the circuit. If the junction is found to be enabled, which means a bit of 1 is stored, the circuit will output a logic high level. On the other hand, if the junction is found to be disabled, a logic low level will output from the circuit.
In order to allow for fast data processing and access, the 7016S35JI is equipped with dynamic random access memory (DRAM) technology. This allows for writing and reading data to and from the memory cell with faster speeds than static memory. It also allows for decentralized data storage, which reduces the latency when fetching data from the memory.
The 7016S35JI is a versatile memory device with a number of applications in various fields. It is able to maintain digital data in environments with fluctuating power sources or temperatures, making it useful in a variety of environments. It exploits DRAM technology to facilitate fast data access, and is able to handle both writing and reading of data with ease.
The specific data is subject to PDF, and the above content is for reference
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