Allicdata Part #: | 70261S15PF8-ND |
Manufacturer Part#: |
70261S15PF8 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 256K PARALLEL 100TQFP |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 256Kb (16... |
DataSheet: | 70261S15PF8 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 256Kb (16K x 16) |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 15ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LQFP |
Supplier Device Package: | 100-TQFP (14x14) |
Base Part Number: | IDT7026 |
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70261S15PF8 is a type of memory device that performs a variety of functions. It is a high speed 512 Megabit x 8 DRAM (Dynamic Random Access Memory) that features fast operating frequency and low-power consumption. It is widely used in a variety of applications, from automotive electronics to medical devices. This article will discuss the application field and working principle of the 70261S15PF8 memory device.The 70261S15PF8 memory device is used in a wide range of applications, including automotive, telecommunications, industrial control, medical applications, computer peripherals, etc. It is an ideal solution for applications that require high speed operation and low power consumption. The 70261S15PF8 offers a maximum operating frequency of 14 MHz and is available in densities ranging from 256 Kbits to 512 Mbits. The device is extremely reliable and supports low-power operation.The working principle of the 70261S15PF8 memory device is based on dynamic RAM technology. Dynamic RAM utilizes cells that store bits of information, which are written/read/retained by applying/removing a voltage. The 70261S15PF8 operates by storing data in dynamic memory cells, which are arranged in a row-column matrix configuration. Data is written to the memory device by supplying a memory address, followed by the data to be written. Data is then read from the memory device by supplying the same memory address as the one used for writing, followed by the data to be read.The 70261S15PF8 memory device is capable of a wide range of features, including automatic Refresh (ARef), self-refresh, and power up/down. ARef is used to ensure that the data stored in the memory is not corrupted due to voltage irregularities. Self-refresh is used to reduce power consumption during idle periods. Lastly, power-up/down enables the memory device to be powered off and on without corrupting the data stored in the memory.In conclusion, the 70261S15PF8 memory device is an ideal solution for a wide range of applications, offering high speed operation and low power consumption. It is based on dynamic RAM technology, with features such as automatic Refresh, self-refresh, and power up/down allowing the device to retain data, reduce power consumption and be powered on/off without corrupting the data stored in the memory device.
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