70261S25PF/C Allicdata Electronics
Allicdata Part #:

70261S25PF/C-ND

Manufacturer Part#:

70261S25PF/C

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 256K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 256Kb (16...
DataSheet: 70261S25PF/C datasheet70261S25PF/C Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (16K x 16)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Description

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Memory devices provide an important role in modern computing, facilitating the processing and storage of information more efficiently and securely than ever before. One example of a memory device is the model 70261S25PF/C, which is a Flash EEPROM that can be used in a variety of computer applications. This article will discuss the application field and working principle of the 70261S25PF/C.

The 70261S25PF/C has been designed for general-purpose usage across a range of computer applications, including the automotive, consumer, industrial, and medical markets. This non-volatile storage device has the ability to store up to 4 Mbits of data, making it ideal for applications such as vehicle control systems and network storage solutions. It is commonly used to store relatively static data, such as lookup table and parameter values, which are required to be retained even when power is removed.

The 70261S25PF/C has a typical read access time of 70 ns and a typical write access time of 200 ns. These times are important when considering the speed at which the data can be read and written to the memory device. It also features a data retention period of 10 years, providing a good level of assurance that the stored data will remain secure over a longer period of time.

The working principle of the 70261S25PF/C is based on Flash EEPROM technology, which enables data to be written and erased electrically. This is achieved by using a combination of two transistors which form the ‘floating gate’. When a voltage is applied, electrons are trapped within the floating gate and the memory cell holds a 0 or a 1 value, depending on whether the electrons are present or absent. This data can then be read back whenever it is required.

The 70261S25PF/C also features a built-in ECC (error correction code) functionality, which works by correcting single-bit errors in the stored data. This ensures that any errors that occur during the write or read process can be corrected before they cause any issues with the data. It also has a ‘secret’ protection feature, which makes it difficult for an unauthorized user to access sensitive data stored on the device.

In conclusion, the 70261S25PF/C is a versatile memory device that is suitable for a wide range of applications. It is based on Flash EEPROM technology and is highly reliable, with a data retention period of 10 years and an ECC functionality that ensures that any errors in the data can be corrected. Ultimately, this makes the device a great choice for any computer application that requires reliable and secure storage of information.

The specific data is subject to PDF, and the above content is for reference

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