7026L20JGI Allicdata Electronics
Allicdata Part #:

7026L20JGI-ND

Manufacturer Part#:

7026L20JGI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 256K PARALLEL 84PLCC
More Detail: SRAM - Dual Port, Asynchronous Memory IC 256Kb (16...
DataSheet: 7026L20JGI datasheet7026L20JGI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Preliminary
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (16K x 16)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.31x29.31)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

7026L20JGI Application Field and Working Principle

The 7026L20JGI is a type of static random-access memory (SRAM) that features fast access time, low dynamic power consumption and also small size. As a type of SRAM, it provides an ideal solution for customers demanding applications that require reliable and fast data throughput that needed from a non-volatile memory device. It is an ideal memory for a variety of applications, such as communications equipment, industrial automation equipment, automotive, computers and other embedded systems.

The working principle of the 7026L20JGI is based on a circuit that is made up of six transistors. These transistors form the SRAM cell, which stores one bit of information. The cell has two modes: write and read. In write mode, the two transistors that form the cell are switched on to store data in the cell. In read mode, the two transistors are shorted to read the data stored.

Data is written to the SRAM cell by applying a voltage across the transistors. This voltage is used to turn on the two transistors which form the cell, allowing the data to be stored in the cell. When data is read from the SRAM cell, the voltage is again applied to the transistors, forcing them to short the data out of the cell. The data is then read from the cell and placed on a data bus, allowing the data to be transferred back to whatever system is requesting it.

The advantages of the 7026L20JGI memory include its small size, low power consumption and fast access time. Its small size means that it can be used in applications where space is limited, or where multiple memory devices must be used together. Its low power consumption makes it ideal for applications where power consumption must be kept to a minimum, such as mobile or embedded applications. Its fast access time allows for fast data throughput, which is ideal for applications requiring real-time data transfer.

The 7026L20JGI is an ideal memory for a variety of applications, such as communications equipment, industrial automation equipment, automotive, computers and other embedded systems. Its fast access time, low power consumption and small size make it an ideal choice for any application that needs reliable and fast data throughput.

The specific data is subject to PDF, and the above content is for reference

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