7028L20PFI8

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The 7028L20PFI8 is a Memory device specifically designed for use in embedded systems with high-density memory requirements. It is a single-component solution using Static Random Access Memory (SRAM).

Application Field

The 7028L20PFI8 is a high-performance memory device, commonly used in embedded systems such as telecommunications, military systems, aerospace, industrial automation systems, and intelligent transportation system. It is suitable for applications requiring high-density, high-performance memory storage. It is also suitable for applications in fieldbus systems such as CAN, CC-Link, and RS-485.

Working Principle

SRAM is a nonvolatile memory technology which uses a bank of transistors and capacitors. The device utilizes a capacitor to store a small amount of charge or data. An array of transistors allows the circuit to access the data stored in the capacitor. When the transistor is switched on, the capacitor is charged, whereas when the transistor is off, the capacitor is discharged. The transistors in the array are typically arranged in a configuration of rows and columns, with one row and one column representing a single memory cell.

SRAM works on the principle of charging and discharging electrical signals. When a voltage is applied to a data line of one of the cells, the cell is charged. When the voltage is removed, the charge is discharged. This process can be used to store information in the form of binary digits. When the voltage is applied again, the cell will re-read the data and return it.

The 7028L20PFI8 memory device utilizes a split-gate SRAM technology which utilizes a source-gate-drain-drain operating principle. This type of SRAM device is particularly suitable for high-density memory storage applications. In addition, the 7028L20PFI8 also utilizes the power-conserving “Self Refresh” function, which is a feature which allows the device to maintain data without the need for external power.

Conclusion

The 7028L20PFI8 memory device is a highly efficient and reliable solution for embedded systems with high-density memory requirements. It utilizes a single-component Static Random Access Memory (SRAM) solution and utilizes a source-gate-drain-drain operating principle. The device also features a power-conserving “Self Refresh” function which can maintain data without the need for external power. The 7028L20PFI8 is suitable for applications in telecommunications, military systems, aerospace, industrial automation systems, and intelligent transportation system.

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