709089L12PF8

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Synchronous
Memory Size:	512Kb (64K x 8)
Write Cycle Time - Word, Page:	--
Access Time:	12ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	100-LQFP
Supplier Device Package:	100-TQFP (14x14)
Base Part Number:	IDT709089

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Introduction

709089L12PF8 is an innovative memory device designed to provide greater capacity and shorter bus selection times than traditional memory devices. It is a combination of dynamic random access memory (DRAM) and static random access memory (SRAM) with a single byte per cell for fast access. This combination of memory technologies is known as a hybrid memory device (HMD).

Application Field

709089L12PF8 primarily targets system-on-chip (SoC) designs that need to combine a larger capacity with a faster bus selection time than what DRAM and SRAM can independently provide. 709089L12PF8 is ideal for applications such as graphics cards, digital signal processors (DSPs), embedded processors, and general-purpose processing units (GPPs).Aside from these, 709089L12PF8 also provides great benefits for storage-intensive applications such as digital video recorders (DVRs), network attached storage (NAS) devices, and enterprise storage arrays. The hybrid memory device allows designers to optimize their designs to reduce power consumption while providing a greater performance.

Working Principle

The 709089L12PF8 is a fast and efficient technology of combining DRAM and SRAM in a single memory device. The memory is made up of a combination of DRAM cells and SRAM cells. The DRAM cells are used to store small amounts of data, while the SRAM cells are used to store larger amounts of data. The large capacity of DRAM cells is combined with the fast access times of SRAM cells for a unified memory solution. The memory device has two main components: a memory bank and an interface. The memory bank consists of the DRAM cells and SRAM cells arranged on a grid. Data access is handled by the interface, which can be composed of either a specialized chip or an external controller. This interface determines which cells are read and written to, as well as the read/write speeds. The 709089L12PF8 supports a wide range of bus architectures and protocols, including DDR3, DDR4, and GDDR5, which allows it to be used in different systems. It also supports memory density up to 64 MB, which means it can scale to the needs of the application.

Conclusion

709089L12PF8 is an innovative and cost-effective combination of DRAM and SRAM technology. It is ideal for SoC designs that need to combine a larger capacity with a faster bus selection time than what DRAM and SRAM can independently provide. It is also suitable for storage-intensive applications such as, digital video recorders, network attached storage devices, and enterprise storage arrays. With its wide range of bus architectures, protocols, and memory density, the hybrid memory device offers great benefits for designers.

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