709349L7PFGI

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Synchronous
Memory Size:	72Kb (4K x 18)
Write Cycle Time - Word, Page:	--
Access Time:	7.5ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	100-LQFP
Supplier Device Package:	100-TQFP (14x14)
Base Part Number:	IDT709349

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Introduction

The 709349L7PFGI is a type of memory device commonly used in embedded systems and other specialized electronics applications. It is a static random access memory (SRAM) device, which means that data stored in its memory cells retains its state even when there is no power supply to the device. The 709349L7PFGI is a DRAM (Dynamic Random Access Memory) based device that uses the Electron-Trapping (E-T) technology to achieve high-speed operation and low power consumption.

Applications of 709349L7PFGI

The 709349L7PFGI is primarily used in embedded systems, such as industrial automation systems, sensors, microcontrollers, and robotics. It offers many advantages over other memory devices, including higher speed, increased data storage, and improved energy efficiency. The 709349L7PFGI also offers a high degree of reliability, making it an ideal choice for applications requiring a high degree of reliability.The 709349L7PFGI memory device is often used in applications that require a large amount of data storage, such as video processing, image processing, and audio processing. In these applications, it can provide a fast and reliable data storage solution. The 709349L7PFGI memory device is also used in specialized applications, such as in medical imaging, military equipment, and aerospace systems.

Advantages of 709349L7PFGI

The 709349L7PFGI memory device is one of the most advanced and reliable types of memory available. It offers a number of advantages over other types of memory, including:• High speed: The 709349L7PFGI memory device is capable of operating at high speeds, making it ideal for applications that require quick access to data.• Low power consumption: The 709349L7PFGI memory device uses Electron-Trapping technology, which results in a low power consumption, making it ideal for embedded applications and other specialized electronics applications. • Improved reliability: The 709349L7PFGI memory device is highly reliable, making it an ideal choice for applications requiring a high degree of reliability.

Working principle of 709349L7PFGI

The 709349L7PFGI memory device uses the Electron-Trapping (E-T) technology that is similar to the Charge Trap Flash (CTF) technology used in flash memory. The E-T technology works by trapping electrons in the memory cells, which results in improved data storage and retention.In this technology, the electrons are trapped in a layer of insulating material between two electrodes, which acts as a dielectric. The ions in the dielectric form an electric field, which affects the electrons and allows them to be stored in the memory cells. When power is applied to the device, the stored electrons are released, which then allows the device to read or write the data stored in the cells.The 709349L7PFGI memory device also offers a number of additional features that make it an ideal choice for applications requiring a high level of performance. The device is capable of performing 8-bit operations at speeds of up to 667 MHz and includes features such as error correction, refresh, and write cycles. This results in a device that is fast, reliable, and efficient.

Conclusion

The 709349L7PFGI memory device is a type of static random access memory (SRAM) that is commonly used in embedded systems and other specialized electronics applications. This device is capable of operating at high speeds and it also offers a number of advantages over other types of memory, including improved data storage and reliability. Additionally, the 709349L7PFGI memory device uses Electron-Trapping (E-T) technology that results in a low power consumption and improved data storage. This makes the device an ideal choice for applications requiring a high degree of efficiency and reliability.

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