70V06L45J8 Allicdata Electronics
Allicdata Part #:

70V06L45J8-ND

Manufacturer Part#:

70V06L45J8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 128K PARALLEL 68PLCC
More Detail: SRAM - Dual Port, Asynchronous Memory IC 128Kb (16...
DataSheet: 70V06L45J8 datasheet70V06L45J8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (16K x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)
Description

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Memory: 70V06L45J8

70V06L45J8 is a type of memory that is commonly used in a wide range of applications. It is a dynamic random-access memory (DRAM) that is designed to provide fast storage and retrieval of data. The memory is composed of cells that can be accessed sequentially or random, allowing the contents of the cells to be read or written in a matter of nanoseconds.

Application Field

70V06L45J8 is used in a wide range of applications, such as embedded systems, automotive, medical and industrial applications. This type of memory is often used for code execution and data storage, as it provides high performance and low power consumption. It is also used in PCs and other computer systems, where it is used for main memory and cache. 70V06L45J8 is also often used in wireless communication systems and other applications where the speed and reliability of the memory are important. The memory is also often used in gaming consoles, where fast load times are important for the user experience.

Working Principle

70V06L45J8 memory works on a simple principle. Each cell of the memory consists of one or more transistors and capacitors. When a voltage is applied to the cell, the charge can be stored on the capacitors. The charge stored on the capacitors can then be read or written in a matter of nanoseconds. The memory is composed of a number of cells arranged in a matrix, allowing random access to the contents of any cell. When reading or writing data to the memory, the data is transferred between the cells and the processor via address and data buses. The address bus is used to select which cell the data is to be read from or written to. The data bus is used to transfer the data between the memory and the processor. In addition, the memory uses a system of address decoding to determine which cells are to be read or written.

Conclusion

70V06L45J8 is a type of memory that is commonly used in a wide range of applications. It is a dynamic random-access memory (DRAM) designed to provide fast storage and retrieval of data. The memory is composed of cells that can be accessed sequentially or randomly, allowing contents of the cells to be read or written in a matter of nanoseconds. It is used in embedded systems, automotive, medical and industrial applications, as well as gaming consoles and other applications where speed and reliability are important. The memory works on a simple principle, using address and data buses to read and write data between the cells and the processor.

The specific data is subject to PDF, and the above content is for reference

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