| Allicdata Part #: | 70V25L25PF8-ND |
| Manufacturer Part#: |
70V25L25PF8 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | IDT, Integrated Device Technology Inc |
| Short Description: | IC SRAM 128K PARALLEL 100TQFP |
| More Detail: | SRAM - Dual Port, Asynchronous Memory IC 128Kb (8K... |
| DataSheet: | 70V25L25PF8 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Dual Port, Asynchronous |
| Memory Size: | 128Kb (8K x 16) |
| Write Cycle Time - Word, Page: | 25ns |
| Access Time: | 25ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 3 V ~ 3.6 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 100-LQFP |
| Supplier Device Package: | 100-TQFP (14x14) |
| Base Part Number: | IDT70V25 |
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Memory is an essential part of any computer system, allowing for the storage of data and instructions to be used when needed. The 70V25L25PF8 is a type of memory that is optimized for use in a variety of applications. In this article, we will look at the application field and working principle of 70V25L25PF8.
The 70V25L25PF8 memory is a non-volatile, single-cell memory manufactured by Toshiba. It is used in applications such as embedded systems, industrial automation, and medical instrumentation. The 70V25L25PF8 has a wide temperature range, low supply voltage, and fast read and write speeds, meaning it is an ideal choice for a variety of applications. It is also RoHS and WEEE compliant, making it environmentally friendly.
The 70V25L25PF8 works on the principle of charge storage. It uses a floating gate MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), which stores the charge on a floating gate. This charge is used to control the flow of current in and out of the device. The device can store a single value, depending on whether the charge on the floating gate is either positive or negative.
The device is programmed and erased using erasing and programming pulses. Erasing is done by applying a higher voltage to the floating gate, which causes electrons to flow from the gate. This lowers the gate voltage, thus resetting the memory cell to a negative voltage. Programming is done by applying a lower voltage to the gate, which causes electrons to flow into the floating gate and raises its voltage. This sets the memory cell to a positive voltage.
The 70V25L25PF8 has various features that make it suitable for numerous applications. It has a maximum operating temperature of 85°C and a supply voltage range of 1.2V to 3.3V. The endurance of the device is 10^5 cycles, and it has a write speed of 10ns (nanoseconds). The erase speed is 0.5ms, and the data retention is 10 years at 85°C.
In conclusion, the 70V25L25PF8 is a robust, non-volatile memory device, suitable for a wide range of applications. It has excellent temperature range, low power consumption, fast read and write speeds, and long-term data retention. Making it an ideal choice for embedded system, industrial automation and medical instrumentation.
The specific data is subject to PDF, and the above content is for reference
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70V25L25PF8 Datasheet/PDF