70V25L55J8 Allicdata Electronics
Allicdata Part #:

70V25L55J8-ND

Manufacturer Part#:

70V25L55J8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 128K PARALLEL 84PLCC
More Detail: SRAM - Dual Port, Asynchronous Memory IC 128Kb (8K...
DataSheet: 70V25L55J8 datasheet70V25L55J8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.21x29.21)
Base Part Number: IDT70V25
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is one of the most important building blocks for computing. In modern computing, memories are built from millions of transistors and capacitors, integrated on circuit boards, or embedded in the microprocessors. Without the ability to store information bits in memory cells, computing is not possible.

One of the memory components that has become quite popular in recent times is the 70V25L55J8 integrated circuit. This device is a type of low-power DRAM, suitable for applications that require fast read and write speeds and high storage capacity. The 70V25L55J8 also provides for a wide range of temperatures and is designed for reliable, low-power operation.

The 70V25L55J8 is designed for embedded applications and is capable of functioning in a wide range of voltages and temperatures. It has a wide range of applications that can benefit from its fast write and read speeds and low power consumption.

It can be used in computers, cell phones, digital still cameras, set-top boxes, industrial systems, gaming controllers, and many other applications. It is also widely used in automotive applications due to its ability to tolerate extreme temperatures.

The 70V25L55J8’s working principle is based on a variety of memory technologies. It is a DRAM device, meaning that it stores data in a dynamic way. Dynamic random access memory (DRAM) is a type of data storage device in which data is stored in tiny capacitors and transistors on a semiconductor chip. The data is constantly refreshed, which means that the memory cell will retain its data even when it is not being used.

In addition, 70V25L55J8 is a Flash memory type, which means that it can store a much larger amount of data than a regular DRAM chip. This makes it suitable for applications that need access to more information. It also has better performance than other types of memory, such as SRAM and DRAM.

The 70V25L55J8 also uses a frequency variation circuit (FVC) for dynamic refresh operations. The FVC allows the device to adapt to changes in the environment by adjusting its own frequency so that the data being stored is updated regularly and accurately.

The 70V25L55J8 also uses error-correction codes (ECC) to help ensure data integrity. An ECC can detect errors in data and can alert the system to any changes. This is especially important in critical applications, such as in automotive systems, where accuracy and reliability are of utmost importance.

In summary, the 70V25L55J8 is a versatile memory component with a wide range of application fields and well-designed working principles. Its low power consumption and experience in embedded applications make it a great choice for many embedded application requirements.

The specific data is subject to PDF, and the above content is for reference

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