71024S25TYGI Allicdata Electronics
Allicdata Part #:

71024S25TYGI-ND

Manufacturer Part#:

71024S25TYGI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 32SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: 71024S25TYGI datasheet71024S25TYGI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 32-SOJ
Base Part Number: IDT71024
Description

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Memory is an essential component of a computer system. Memory, including RAM and ROM, provides a way to store data and program instructions, enabling a computer to carry out operations. The 71024S25TYGI is a type of memory technology used in modern computer systems, and can be used for a wide variety of applications.

The 71024S25TYGI technology is a type of non-volatile random access memory, more commonly known as NVRAM. This type of memory does not require a steady power supply in order to retain its contents, thus allowing a computer system to store data even when it is powered down. The 71024S25TYGI uses two transistors and two capacitors to store each bit of data, making it an economical choice for applications that require large amounts of non-volatile memory.

The 71024S25TYGI can be used in a variety of computer systems, ranging from servers and embedded systems to desktop and mobile computers. Many modern consumer electronics, such as navigation systems, digital cameras and digital music players, also use this type of memory to store software configurations and other data. In addition, some industrial applications, such as factory automation and control systems, make use of the 71024S25TYGI due to its low power consumption and long data retention times.

The working principle of the 71024S25TYGI is fairly straightforward. The memory cell consists of two transistors, an NMOS and a PMOS, and two conducting poly-silicon capacitors. When the cell is in an idle state, the capacitors are charged, and the transistors are in the off position. When a read operation is requested, a voltage is applied to the two transistors, allowing them to open and close as required. The data is then retrieved from the charge stored in the capacitors. For a write operation, the transistors are opened, allowing the capacitors to be charged or discharged, thus storing the desired data.

The 71024S25TYGI technology is an economical and reliable choice for applications that require non-volatile memory. Its low power consumption and long data retention time make it ideal for use in a variety of embedded and consumer electronics applications. The availability of different package sizes make the 71024S25TYGI a versatile choice for designers seeking to optimize board space for their applications.

The specific data is subject to PDF, and the above content is for reference

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