71124S12YG Allicdata Electronics
Allicdata Part #:

800-1420-5-ND

Manufacturer Part#:

71124S12YG

Price: $ 1.93
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 32SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: 71124S12YG datasheet71124S12YG Datasheet/PDF
Quantity: 847
1 +: $ 1.74510
10 +: $ 1.56681
25 +: $ 1.54224
50 +: $ 1.53796
100 +: $ 1.37428
250 +: $ 1.32963
500 +: $ 1.32465
1000 +: $ 1.23370
5000 +: $ 1.11628
Stock 847Can Ship Immediately
$ 1.93
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ
Base Part Number: IDT71124
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 71124S12YG is a type of semiconductor Memory. It is a 4M (megabyte) Dynamic Random Access Memory (DRAM). 4M DRAM has 4 million bits of Memory and is often used as main Memory in computers. It is a DRAM, which is a type of sequential access Memory, as opposed to SRAM, or static RAM, which is random access Memory.

The 71124S12YG has a fast, low power design and is ideal for applications such as laptops, PCs, handhelds, and other portable devices. It can operate at a maximum speed of 100MHz, and it has a typical read/write latency of 12.5ns. As a result, it allows for faster data processing than other 4M DRAMs. Furthermore, its low power consumption makes it suitable for applications where power conservation is essential.

In terms of its working principle, the 71124S12YG is a type of synchronous DRAM. This means that it synchronizes itself to its clock signals, which are generated by an external processor. This synchronization facilitates faster data processing and increases performance. In addition, the 71124S12YG utilizes error correction code (ECC) to reduce the number of errors that occur when data is read or written. This helps to ensure the accuracy and reliability of the data stored in the Memory.

The 71124S12YG Memory is commonly used in a variety of applications such as embedded systems, graphics cards, and digital signal processing (DSP). It is also suitable for use in workstations, servers, and other high-performance computers. What\'s more, because of its low power consumption and fast speed, the 71124S12YG Memory is a popular choice for other applications that require Memory with a high degree of reliability and performance.

In summary, the 71124S12YG is a 4M DRAM which is ideal for applications that require a fast and low power type of Memory. It has a fast speed, low power consumption, and utilizes error correction code to improve the accuracy and reliability of the data stored in Memory. It is commonly used in embedded systems, graphics cards, and digital signal processing, but it is also suitable for other applications that require a high degree of performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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