71256L55TDB Allicdata Electronics
Allicdata Part #:

71256L55TDB-ND

Manufacturer Part#:

71256L55TDB

Price: $ 15.61
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 256K PARALLEL 28CDIP
More Detail: SRAM - Asynchronous Memory IC 256Kb (32K x 8) Para...
DataSheet: 71256L55TDB datasheet71256L55TDB Datasheet/PDF
Quantity: 1000
130 +: $ 14.19310
Stock 1000Can Ship Immediately
$ 15.61
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.300", 7.62mm)
Supplier Device Package: 28-CDIP
Description

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Memory has seen rapid development and advancements over the last few years,that are brought about the growing needs posed by today’s technology. The 71256L55TDB is one example of an advanced memory product that is designed for use in a variety of applications. This article will discuss the application fields and working principles of the 71256L55TDB, as well as the features that make it ideal for a variety of uses.

The 71256L55TDB is a dynamic random access memory (DRAM) device that is best suited for use in mission-critical systems, such as medical and military applications. It is designed to work as a stand-alone device, as well as in combination with flash memory, and is capable of supporting high-end data throughputs. It is also designed for use in a variety of mobile phones and other portable devices, such as music players and digital cameras.

The 71256L55TDB features a high memory speed and storage capacity, which make it ideal for a variety of tasks that require a high transfer and storage rate. It also features a wide range of operating temperature and voltage ranges, making it suitable for use in a variety of environments. Other features of this memory product include a low power consumption, high reliability, and a wide range of programming choices, making it a flexible choice for use in advanced applications.

When it comes to working principles, the 71256L55TDB utilizes a double data rate (DDR) architecture. This type of architecture ensures that information can be accessed at twice the speed of single data rate architecture. It also supports simultaneous read and write operations, allowing for higher speeds and improved performance. This architecture also allows for multiple reads and writes, which is important for certain operating requirements.

The 71256L55TDB also features error correction codes (ECC), which greatly reduce the chances of data being corrupted. This feature also helps to speed up the operation of the device and makes it more reliable. In addition, the 71256L55TDB is also equipped with several security measures, such as a write protection scheme, a write protect checking scheme, and various other protected methods.

Overall, the 71256L55TDB is an advanced DRAM device that is suited for use in a variety of applications. It features a high memory speed and storage capacity, a wide range of operating temperature and voltage ranges, a low power consumption, and a wide range of programming choices. In addition, it features a double data rate architecture and error correction codes which make it reliable and secure. These features make the 71256L55TDB an ideal choice for use in mission-critical systems, mobile phones, and other portable devices.

The specific data is subject to PDF, and the above content is for reference

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