Allicdata Part #: | 7130LA20TF-ND |
Manufacturer Part#: |
7130LA20TF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 8K PARALLEL 64TQFP |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 8Kb (1K x... |
DataSheet: | 7130LA20TF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 8Kb (1K x 8) |
Write Cycle Time - Word, Page: | 20ns |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LQFP |
Supplier Device Package: | 64-TQFP (10x10) |
Base Part Number: | IDT7130 |
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7130LA20TF is a type of memory referred to as an asynchronous static random access memory (ASRAM). This memory is used in applications that require high-speed reliable data storage at low power consumption. The 7130LA20TF uses a two-phase clocking scheme always and hence is a perfect fit for applications where small form factor, power efficiency, and scalability are key requirements.
The 7130LA20TF is designed to provide a nonvolatile storage with fast access times and high speed data transfer. It is commonly used in applications like game consoles, microprocessors, embedded displays, and other consumer and industrial applications.
The working principle of the 7130LA20TF is somewhat complex. It works by exploiting the fact that the memory cells are laid out in a two-dimensional grid. Each memory cell is set up so that it senses changes in a vertical line on the grid. When an incoming signal from a write or read cycle is detected, the cell responds appropriately by changing its own state. This is the basis of the 7130LA20TF’s nonvolatileness.
In the write cycle, the 7130LA20TF utilizes two phases. The first phase is the sensing phase where the 7130LA20TF senses the incoming data and determines if it is a write or read cycle. If the write cycle is detected, the memory cell responds by changing its state according to the data. This is the nonvolatileness that the 7130LA20TF provides. In the second phase, the 7130LA20TF then stores the data and either sets or clears the state of the cell. This, along with the sensing phase, completes the write cycle.
The read cycle of the 7130LA20TF is also slightly complex but works on the same principle. It first senses the incoming signal and determines if it is a read or write cycle. If a read cycle is detected, the cell responds by changing its own state and outputting the stored data. This data is then fed back to the controller which can interpret it and process it further.
The 7130LA20TF provides a cost-effective solution for applications needing durable nonvolatile memory solution and high-speed data transfer. The 7130LA20TF also has low power consumption, so it is suitable for battery-based applications. This also makes it perfect for small form factor applications such as embedded displays and game consoles.
The specific data is subject to PDF, and the above content is for reference
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