| Allicdata Part #: | 7130SA35PF8-ND |
| Manufacturer Part#: |
7130SA35PF8 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | IDT, Integrated Device Technology Inc |
| Short Description: | IC SRAM 8K PARALLEL 64TQFP |
| More Detail: | SRAM - Dual Port, Asynchronous Memory IC 8Kb (1K x... |
| DataSheet: | 7130SA35PF8 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Dual Port, Asynchronous |
| Memory Size: | 8Kb (1K x 8) |
| Write Cycle Time - Word, Page: | 35ns |
| Access Time: | 35ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 4.5 V ~ 5.5 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 64-LQFP |
| Supplier Device Package: | 64-TQFP (14x14) |
| Base Part Number: | IDT7130 |
Description
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7130SA35PF8 Memory
The 7130SA35PF8 is a type of memory specifically designed to store data. It features high speed access and is used in various types of applications including embedded systems, computer systems and data storage systems.The 7130SA35PF8 memory is a dynamic random access memory (DRAM) that uses a capacitor system to store bits of data. Each memory cell is composed of two transistors and two capacitors. The transistors are connected to control the flow of electric current between the cell and the bit line. The capacitors store the data until it is read by the memory controller.The memory chip has a higher density than most conventional DRAMs at a much smaller size. It has densities from 8 megabits (Mb) to as high as 128Mb. The memory chip is also designed to offer low power consumption and increased operating speeds compared to other DRAM devices.The application fields for the 7130SA35PF8 are varied. It is used in digital cameras, video capture, VoIP phones and other telecommunication systems. It is also used in personal computers, mobile phones and embedded systems, such as automotive systems. It is suitable for applications that need quick access to large amounts of random access memory.The working principle of the 7130SA35PF8 memory is similar to other DRAMs. The capacitor and transistor system act as a storage space for bits of data. When data is written to this memory, electric current is forced into the capacitor to store the data. When the data is read, the electric current stored in the capacitor is detected and the data is retrieved.The 7130SA35PF8 memory offers high data transfer speeds and low power consumption, making it an ideal choice for various types of applications. It is also suitable for applications that need quick access to large amounts of random access memory. In addition, the memory chip is smaller in size compared to other DRAMs, making it easier to fit into a variety of electronics. With its many advantages, the 7130SA35PF8 is a versatile memory device that is suitable for a variety of applications.The specific data is subject to PDF, and the above content is for reference
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7130SA35PF8 Datasheet/PDF