7133LA55PF Allicdata Electronics
Allicdata Part #:

7133LA55PF-ND

Manufacturer Part#:

7133LA55PF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 32K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 32Kb (2K ...
DataSheet: 7133LA55PF datasheet7133LA55PF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (2K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: IDT7133
Description

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The 7133LA55PF memory is a powerful memory that is used in a wide range of applications. Its high speed and high performance make it a reliable and dependable solution for data storage and processing needs. This type of memory has been used in many types of industries and applications including automotive, military and industrial, telecommunications, and medical. It is also commonly used in consumer electronics products.

The 7133LA55PF memory chips have a unique design and are known for their high speed and performance. They feature dual in-line memory modules (DIMMs) and can be used to store and process information from up to four channel banks. The DIMMs are equipped with a Flash EEPROM and have a high memory bandwidth. This makes the 7133LA55PF memory ideal for high speed memory access and processing.

When it comes to the application field and working principle of the 7133LA55PF memory, there are two main categories that it can fall into. The first is a static random access memory (SRAM), which is used mainly in embedded applications, such as robotics, machine vision, digital signal processing, and so on. The second is the dynamic random access memory (DRAM), which is used mainly in high-performance servers, storage systems and gaming platforms. Both types of memory use different types of cells to store and process information.

In static random access memory (SRAM), each memory cell stores a static amount of data. This data is read and written using a single address, which is then used to access the data from the memory. This type of memory requires a longer access time as compared to dynamic random access memory (DRAM). SRAM also has a low latency, meaning that the time it takes for data to be accessed is shorter than for DRAM.

In contrast, dynamic random access memory (DRAM) uses multiple memory locations. Each memory cell can store a different amount of data, allowing for more control over what data is being accessed. DRAM also has a higher data capacity so data can be accessed faster. DRAM also requires more power, which can limit its use in high-performance applications. In addition, DRAM is more expensive than SRAM due to its higher data capacity and high power requirements.

The 7133LA55PF memory chip is capable of offering both static and dynamic random access memory (SRAM and DRAM) solutions. It is designed to provide users with the highest levels of performance and reliability. Its dual-channel design allows users to store and process more data with less power consumption. The chip also utilizes an on-chip ECC memory controller, which helps reduce the number of errors that can occur when data is being read from and written to the chips. Additionally, this type of memory also offers high I/O and clock speeds.

The 7133LA55PF memory is a powerful memory that can be used in a wide range of applications. Its high speed and high performance make it a reliable and dependable solution for data storage and processing needs. Its dual-channel design provides users with more flexibility when it comes to data storage and processing. Furthermore, its on-chip ECC memory controller helps reduce the number of errors that can occur when data is being read from and written to the chips. This type of memory is suitable for use in both static and dynamic random access memory (SRAM and DRAM) applications.

The specific data is subject to PDF, and the above content is for reference

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