| Allicdata Part #: | 7133SA35FB-ND |
| Manufacturer Part#: |
7133SA35FB |
| Price: | $ 206.22 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | IDT, Integrated Device Technology Inc |
| Short Description: | IC SRAM 32K PARALLEL 68FPACK |
| More Detail: | SRAM - Dual Port, Asynchronous Memory IC 32Kb (2K ... |
| DataSheet: | 7133SA35FB Datasheet/PDF |
| Quantity: | 1000 |
| 36 +: | $ 187.46900 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Dual Port, Asynchronous |
| Memory Size: | 32Kb (2K x 16) |
| Write Cycle Time - Word, Page: | 35ns |
| Access Time: | 35ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 4.5 V ~ 5.5 V |
| Operating Temperature: | -55°C ~ 125°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 68-Flatpack |
| Supplier Device Package: | 68-FPACK |
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The 7133SA35FB is a 6-bit synchronous static random access memory (SRAM) used in high speed and low power computing systems. It is designed to replace the existing 5-bit synchronous static random access memory (SRAM) designs, which traditionally have been used in moderate to high performance computing applications. The 7133SA35FB provides the computing system with improved performance and lower power consumption.
The 7133SA35FB has an read/write frequency of 25 MHz and a cycle time of 40ns, making it one of the fastest SRAMs currently available. It is also designed for low power operation, allowing for a reduced overall power budget. It has a low power standby mode and a low power active mode that further reduces power consumption. The 7133SA35FB has the added benefit of a programmable burst length, allowing for flexible operation.
The 7133SA35FB is primarily used in high-end embedded computing applications. It is commonly used as a main memory or cache memory in set-top boxes, desktops, laptops, and handheld devices. The 7133SA35FB is also frequently used in gaming platforms, communication networks, and other consumer electronics.
The 7133SA35FB operates on a static random access memory (SRAM) principle utilizing a 6-bit word length. The 6-bit word length allows for a total of 64 different byte combinations. This allows for the application to read and write information in a wide variety of different configurations. The 6-bit word length also reduces the number of transistors required for a single operation, resulting in lower power consumption and higher performance.
The 7133SA35FB utilizes a two-cycle read and write operation. During the first cycle, the requested address is sent to the 7133SA35FB from the data bus. The second cycle is the actual read or write operation. During this phase, the requested data is written to the 7133SA35FB from the data bus, or the requested data is read from the 7133SA35FB and sent to the data bus. This two-cycle read and write operation allows for fast data transfer and low power operation.
In summary, the 7133SA35FB is a high-end 6-bit synchronous static random access memory (SRAM) designed to replace existing 5-bit synchronous static random access memory (SRAM) designs. It is primarily used in high-end embedded computing applications such as set-top boxes, desktops, laptops, gaming platforms, communication networks, and other consumer electronics. The 7133SA35FB provides excellent performance and low power operation due to its two-cycle read and write operation and programmable burst length.
The specific data is subject to PDF, and the above content is for reference
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7133SA35FB Datasheet/PDF