7133SA35GB Allicdata Electronics
Allicdata Part #:

7133SA35GB-ND

Manufacturer Part#:

7133SA35GB

Price: $ 136.93
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 32K PARALLEL 68PGA
More Detail: SRAM - Dual Port, Asynchronous Memory IC 32Kb (2K ...
DataSheet: 7133SA35GB datasheet7133SA35GB Datasheet/PDF
Quantity: 1000
21 +: $ 124.48900
Stock 1000Can Ship Immediately
$ 136.93
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (2K x 16)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 68-BPGA
Supplier Device Package: 68-PGA (29.46x29.46)
Description

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Memory

Memory can be divided in to many categories. 7133SA35GB is a type of memory that focuses on storing large amounts of information in an efficient and organized manner. It is often used in applications such as servers, databases, and embedded systems that need to store large amounts of detailed data.

The 7133SA35GB memory is typically composed of 32GB NAND flash memory. This type of memory is favored because it is able to store more data than other types of memory and it is reliable and durable. NAND flash memory utilizes floating-gate transistors and cell-level transistor gates as its unit of information storage, allowing for larger amounts of data to be stored in minimal physical space.

7133SA35GB can be characterized by a wide range of features which make it ideal for many applications, including:

  • Fast read and write speeds
  • Low power usage
  • High degree of reliability and durability
  • Ease of integration with other components
  • Ability to store large amounts of data in minimal physical space

The working principle of 7133SA35GB memory is to use two transistors at the cell-level-a control gate and a floating gate. When the data is being written to the cell, charge is transferred through the control gate onto the floating gate. This creates an electric field which stores the data. When the data is to be read from the cell, charge is transferred from the floating gate through the control gate onto the bitlines. This data is then read and sent to the processor for processing.

7133SA35GB memory is often used in applications that require high memory density, low power usage, and high reliability. Some of these applications include servers, databases, embedded systems, and consumer electronics. In these applications, multiple transistors act together to increase memory density, allowing more data to be stored in minimal physical space. Additionally, this memory is designed to consume less power while providing greater reliability than other types of memory.

7133SA35GB memory is reliable, long-lasting, fast, and capable of storing large amounts of data in a minimal physical space. Its high-shrink transistors, which include both control and floating gates, allows it to store more data in a smaller physical space, while consuming less power. It is an excellent choice for a variety of applications, such as servers, databases, embedded systems, consumer electronics, and others.

The specific data is subject to PDF, and the above content is for reference

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