
Allicdata Part #: | 71342LA20PF-ND |
Manufacturer Part#: |
71342LA20PF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 32K PARALLEL 64TQFP |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 32Kb (4K ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 32Kb (4K x 8) |
Write Cycle Time - Word, Page: | 20ns |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LQFP |
Supplier Device Package: | 64-TQFP (14x14) |
Base Part Number: | IDT71342 |
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Memory: 71342LA20PF Application Field and Working Principle
The memory contained in a modern computer system is equivalent to the mind of aperson. It stores information that can be accessed quickly and efficiently.71342LA20PF is a type of memory loved by many computer enthusiasts. It is widely usedin the field of computer system and digital signal processing.
71342LA20PF are low-power static random access memory (SRAM) components withhigh reliability and stability. It has excellent specifications and can be used in avariety of applications. This type of memory has an extremely low powerconsumption, and its perfect operational performance can ensure the besteffectiveness during system/program execution.
In addition, 71342LA20PF SRAM has a wide temperature range and can operatein temperature environments ranging from -40°C to +85°C. Since it has a high densityof 64KB, it can provide faster and more accurate performance, minimum energyconsumption, and maximum benefits. It also has excellent refresh characteristics,high-speed clock/setup reduction, increased system reliability, and low totalpower supply voltage.
When it comes to its working principle, 71342LA20PF SRAM uses an array oftransistors and capacitors that store each bit of information in the memory unit. Thetransistors create two logic states, 0 and 1 which indicates the stored digital data.Each cell consists of an access-transistor and a storage node (capacitor). Duringwrite operations, the access-transistor is activated and the charge (1 or 0) from theWord-Line is written to the storage node. During a read operation, the storage nodeis read and written to the Bit-Line.
In conclusion, 71342LA20PF SRAM is broadly used in applications such as medicalsystems, communications equipment, networking and servers, control systems,entertainment systems, and other electronic equipment. As a low-power, high-density, high-performance memory, 71342LA20PF SRAM is an ideal memory solutionfor these systems.
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