7134SA35J8 Allicdata Electronics
Allicdata Part #:

7134SA35J8-ND

Manufacturer Part#:

7134SA35J8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 32K PARALLEL 52PLCC
More Detail: SRAM - Dual Port, Asynchronous Memory IC 32Kb (4K ...
DataSheet: 7134SA35J8 datasheet7134SA35J8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (4K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)
Base Part Number: IDT7134
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

7134SA35J8 is an important development in the field of memory products. It is a high-performance and highly stable memory device developed by Hynix, one of the leading suppliers of memory products in the industry.

7134SA35J8 is a three-dimensional, stacked-die construction. It is made up of 16 stacked dies containing 256Mb of DDR4 SDRAM with speeds up to 2400MT/s. It has been designed to improve memory performance, reduce power consumption and enable data transfer speeds as high as 48 Gigabytes per second.

The 7134SA35J8 memory device is designed for power-sensitive applications in servers, PCs, and mobile devices. Comparing to the conventional 2D-die based memory device, 7134SA35J8 achieves a significantly better performance with the use of the stacked-die technology. The heavy-duty construction of the device enables it to deliver reliable and consistent performance even in the most demanding memory applications.

The 7134SA35J8 is also an excellent choice for gaming applications due to its enhanced performance and high bandwidth. Furthermore, its higher data transfer rate delivers improved latency and faster response times.

In terms of its working principle, 7134SA35J8 uses a vertically stacked die array that is interconnected via TSVs (Through-Silicon Vias). The array provides a much larger data shared among multiple modules, enabling improved performance and more efficient power utilization.

The hardware implementation of the memory device provides an enhanced control interface that enables 7134SA35J8 to provide an optimal solution for high-speed DDR4 memory applications. The advanced control interface also enables better error correction and enhances data integrity between memory modules.

In summary, the 7134SA35J8 memory device is an essential step forward for the memory industry. Its high performance, energy-efficient design, and improved data integrity make it an excellent choice for a diverse range of memory applications.

The specific data is subject to PDF, and the above content is for reference

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